\section{Introduction}
The influence of the impurity diffusion mechanism on the form of
dopant distribution after annealing of $\delta $-doped layers has
been investigated in \cite{Cowern-90,Cowern-91}. The authors
obtained a one-dimensional analytical solution of the system of
equations that includes the conservation law for the immobile
component (substitutionally dissolved impurity atoms) and the
diffusion equation for the mobile impurity component
\cite{Cowern-90}. It was supposed that exchange of impurity atoms
occurs between mobile and immobile species. It was also supposed
that the initial impurity distribution is described by the $\delta
$-function and that the generation rate of mobile impurity
interstitials is proportional to the concentration of
substitutionally dissolved impurity atoms. It follows from the
solution obtained that the extended ``tail'', formed in the region
of low impurity concentration of dopant profile after annealing,
represents a straight line for the logarithmic concentration axis
if the impurity atom migrates once. On the other hand, in the case
of multiple events of migration of the interstitial impurity atom,
the Gaussian distribution describes the shape of the impurity
profile in the ``tail'' region.

As follows from the experimental data, after annealing the
impurity concentration profiles can be similar to the Gaussian
distribution. On the other hand, many of the measured impurity
profiles, especially after low-temperature treatment, are
characterized by an extended ``tail'' which looks like a straight
line if the concentration axis is logarithmic (see, for example,
the review of the experimental data in \cite{Velichko-12}).
Therefore, it was proposed in \cite{Cowern-90,Cowern-91} that the
microscopic diffusion mechanism of impurity atoms be determined
based on the form of the dopant distribution after annealing. It
is worth noting that in \cite{Cowern-90,Cowern-91} continuous
generation of mobile species in the region of high impurity
concentration was supposed in the case where an impurity atom
migrates once. In \cite{Velichko-07,Velichko-2011} analytical
solutions were obtained for the initial impurity distributions
that, in contrast to \cite{Cowern-90,Cowern-91}, represent an
uniform doped layer or the Gaussian distribution. It was shown
that the ``tails'' also represent a straight line just as for the
initial distribution described by $\delta $-function
\cite{Cowern-90,Cowern-91}.

At present, the method of ion implantation with low budget
annealing such as, for example, high-temperature spice annealing
or low-temperature long-term thermal treatment, is widely used for
fabricating modern semiconductor devices and integrated
microcircuits.  During ion implantation, a fraction of the
implanted ions can occupy an interstitial position and participate
in the interstitial migration at subsequent annealing. It is
expected that this phenomenon will be most pronounced for
implantation of light ions, for example, boron ions, and also for
implantation of the medium doses of heavier ions
($\sim$10${}^{14}$ cm${}^{-2}$) when the maximal concentration of
impurity atoms is below the solubility limit but higher than the
intrinsic carrier concentration at the annealing temperature
\cite{Huang-97}. Indeed, in these two cases one does not observe
the amorphization of an implanted layer. As a result, annealing of
defects generated by ion implantation occurs during the total
thermal treatment, instead of the solid phase recrystallization of
the created amorphous layer at the initial stage of the thermal
processing. Indeed, it is well known that during solid phase
epitaxial regrowth (SPER) there occurs annealing of the main part
of defects created by ion implantation. In addition, almost all
implanted impurity atoms go over into the substitutional position,
even for the concentration above the solubility limit. It will be
expected that in the absence of SPER the impurity atoms that
remained in the interstitial position will migrate to a
significant distance before they become substitutionally
dissolved. It is worth noting that in the case of low-temperature
treatment with duration of ten minutes and longer, a significant
number of the impurity interstitials can also be generated at the
initial stage of thermal processing due to annealing or
rearrangement of different kind of defects incorporating impurity
atoms.

Therefore, in contrast to the case of continuous generation of
impurity interstitials during annealing described in
\cite{Cowern-90,Cowern-91,Velichko-07,Velichko-2011}, the purpose
of this work is to investigate the characteristic features of
ion-implanted impurity redistribution that can appear due to
diffusion of the previously formed interstitial impurity atoms.

\section{The system of the equations describing interstitial diffusion}
Let us assume that the substitutionally dissolved impurity atoms,
as well as the impurity atoms incorporated into clusters,
precipitates, and radiation defects are immobile and do not
participate in diffusion due to the low annealing temperature. As
the formation of extended ``tails'' due to the migration of
impurity interstitials occurs in the region of low impurity
concentration $C\le n_{i} $, we neglect the influence of the
built-in electric field on the diffusion process. Here $C$ is the
concentration of substitutionally dissolved impurity atoms and
$n_{i}$ is the intrinsic carrier concentration. Then, the system
of equations that was proposed in \cite{Velichko-83,Velichko-88}
and that describes migration of nonequilibrium impurity
interstitial atoms and their subsequent transition to the
substitutional position can be presented in the form given below.

\noindent \textbf{1. The conservation law for substitutionally
dissolved impurity atoms:}

\begin{equation} \label{Conservation law}
\frac{\partial C(x,t)}{\partial t} =\frac{C^{AI} (x,t)}{\tau ^{AI} } \,  .
\end{equation}

\noindent \textbf{2. The equation of diffusion for nonequilibrium
impurity interstitials:}

\begin{equation} \label{Nonequilibrium impurity interstitials}
\frac{\partial C^{AI} }{\partial t} =d^{AI} \frac{\partial ^{2}
C^{AI}}{\partial x^{2} } -\frac{C^{AI} }{\tau^{AI} } +G^{AIR}
(x,t) ,
\end{equation}

\noindent where $C^{AI}$ is the concentration of nonequilibrium
interstitial impurity atoms (IIA); $d^{AI} $ and $\tau ^{AI} $ are
the diffusivity and average lifetime of these impurity
interstitials, respectively; $G^{AIR} $ is the generation rate of
interstitial impurity atoms per unit volume due to the annealing
of implantation defects and  rearrangement of clusters
(precipitates). It is worth noting that the total concentration of
impurity atoms $C^{T} $ includes concentrations of the
substitutionally dissolved impurity atoms, impurity atoms
incorporated into clusters, precipitates, and radiation defects,
as well as the concentration of impurity interstitial atoms
$C^{AI}$.

It is well known that interstitial impurity atoms can become
substitutionally dissolved due to the recombination with vacancies
(the so-called the Frank-Turnbull diffusion mechanism
\cite{Frank-56}). In addition, a migrating interstitial impurity
atom can kick-out the host atom and occupy a substitutional
position (the reverse Watkins effect). Then, the average lifetime
of IIA can be presented in the following form:

\begin{equation} \label{tau}
\frac{1}{\tau ^{AI} } =k^{AIV} C^{V} +k^{AI}  ,
\end{equation}

\noindent where $k^{AIV}$ is the effective coefficient of
recombination of interstitial impurity atoms with vacancies;
$C^{V} $ is the vacancy concentration; $k^{AI} $ is the
coefficient describing transition of the interstitial impurity
atom to the substitutional position due to the kick-out mechanism.

It is worth noting that this paper investigates an extreme case of
the redistribution of implanted atoms occupying interstitial
position immediately after implantation. Therefore, the generation
term $G^{AIR}=0$. Then, Eqs. \eqref{Conservation law} and
\eqref{Nonequilibrium impurity interstitials} are independent if
the vacancy distribution is uniform ($C^{V} \left(x,t\right)={\rm
const}$). If $d^{AI}$ is also constant, one can obtain an
analytical solution of Eq. \eqref{Nonequilibrium impurity
interstitials}.

\section{Analytical solution of nonstationary diffusion equation
for interstitial impurity atoms} An analytical solution of Eq.
\eqref{Nonequilibrium impurity interstitials} can be obtained
within the framework of the Green function approach
\cite{Tichonov-90,Budak-88,Duffy-01}. For this purpose let us
present Eq. \eqref{Nonequilibrium impurity interstitials} in the
following form:

\begin{equation} \label{Normalized equation}
\frac{\partial \, C^{AI} }{\partial \, \theta } =l_{AI}^{2}
\frac{\partial ^{2} C^{AI} }{\partial \, x^{2} } -C^{AI}  ,
\end{equation}

\noindent where $l_{AI} =\sqrt{d^{AI} \tau ^{AI}} $ is the average
migration length of impurity interstitials; $\theta ={t
\mathord{\left/{\vphantom{t \tau ^{AI}
}}\right.\kern-\nulldelimiterspace} \tau ^{AI} } $ is the relative
time.

Let us also assume that the distribution of nonequilibrium
impurity interstitials after implantation and after rapid
annealing of implantation defects incorporating impurity atoms is
proportional to the distribution of the implanted atoms which can
be approximately described by the Gaussian distribution. Then, the
initial condition for impurity interstitials can be presented in
the following form:

\begin{equation} \label{Initial condition}
C_{0}^{AI} (x)=C^{AI} (x,\; 0)=C_{m}^{AI} \exp
\left[-\frac{\left(x-R_{p} \right)^{\, 2}}{2\Delta R_{p} ^{2}}
\right] ,
\end{equation}

\noindent where $C_{m}^{AI}$ is the maximal concentration of
interstitial impurity atoms after implantation or at the initial
stage of annealing; $R_{p} $ and $\Delta R_{p} $ are the average
projective range of implanted ions and the straggling of the
projective range, respectively.

Let us obtain an analytical solution of the diffusion equation for
nonequilibrium impurity interstitials \eqref{Normalized equation}
in one-dimensional (1D) semiinfinite domain $\left[0,\; +\infty
\right]$. For the sake of simplicity, the Dirichlet boundary
condition can be imposed on the surface and in the bulk of a
semiconductor:

\begin{equation} \label{Dirichlet}
C^{AI} (0,\; \theta )=C_{S}^{AI}  , \qquad \qquad \qquad  C^{AI}
(+\infty ,\; \theta )=0 ,
\end{equation}

\noindent where $C_{S}^{AI}$ is the concentration of interstitial
impurity atoms on the surface of a semiconductor.

For this purpose, let us consider Eq. \eqref{Normalized equation}
in the infinite domain $\left[-\infty ,\; +\infty \right]$ and use
separation of variables \cite{Tichonov-90,Farlow-93} assuming that
the required solution is a product of two functions, one of which
depends only on the relative time $\theta $, whereas the other is
the function of only the spatial coordinate $x$, i.e., $C^{AI}
(x,\theta )=T(\theta )X(x)$. Then, $C_{\theta }^{AI} =T'X$,
$C_{xx}^{AI} =TX''$ and Eq. \eqref{Normalized equation} transforms
into the equation

\begin{equation} \label{TX}
T'X=l_{AI}^{2} TX''-TX .
\end{equation}

Dividing the right- and left-hand sides of Eq. \eqref{TX} by
$\left(l_{AI}^{2} TX\right)$, we obtain the following equation:

\begin{equation} \label{Separation}
\frac{T'}{l_{AI}^{2}T} =\frac{X''}{X} -\frac{1}{l_{AI}^{2} }
=-\lambda ^{*2} ,
\end{equation}

\noindent where $\lambda ^{*2} $ is the parameter of division that
depends neither on $x$, nor on $\theta$, i. e., represents a
certain constant. Using this property of $\lambda ^{*2}$, one can
obtain the following system of independent equations:

\begin{equation} \label{Time}
\frac{T'}{T} =-l_{AI}^{2} \lambda ^{*2},
\end{equation}

\begin{equation} \label{Coordinate}
X''+\lambda ^{2} X=0 ,
\end{equation}

\noindent where $\lambda ^{2} =\lambda ^{*2} -{1
\mathord{\left/{\vphantom{1 l_{AI}^{2}
}}\right.\kern-\nulldelimiterspace} l_{AI}^{2}} $ .

The solution of Eq. \eqref{Time} has the following form:

\begin{equation} \label{Time Solution}
T(\theta )=T_{0} \exp \left[\, -l_{AI}^{2} \lambda ^{*2} \theta \right] ,
\end{equation}

\noindent where $T_{0}$ is the value of the function $T(\theta)$
for the initial moment of annealing.

The solution of homogeneous equation \eqref{Coordinate} can be
obtained by employing the standard substitution $X(x)=A_{0}
e^{\alpha {\kern 1pt} x} $, where $A_{0} $ and $\alpha $ are some
constants. Based on the obtained solutions of Eqs. \eqref{Time}
and \eqref{Coordinate} and using the procedure described in
\cite{Tichonov-90}, it is possible to find the solution of the
boundary value problem \eqref{Normalized equation}, \eqref{Initial
condition}, and \eqref{Dirichlet} for zero boundary condition on
the surface of a semiconductor, $C_{S}^{AI} =0$. This solution has
the following form:

\begin{equation} \label{Solution}
C_{ZeS}^{AI} (x,\; \theta )=\int _{0}^{\infty }G(x,\xi ,\theta )
\, C_{0}^{AI} (\xi )d\xi  ,
\end{equation}

\noindent where $G(x,\xi ,\theta )$ is the Green function

\begin{equation} \label{Green function}
G(x,\xi ,\theta )=\frac{1}{2\sqrt{\pi l_{AI}^{2} \theta } }
\left\{\exp \left[-\frac{(x-\xi )^{2} }{4l_{AI}^{2} \theta }
\right]-\exp \left[-\frac{(x+\xi )^{2} }{4l_{AI}^{2} \theta }
\right]\right\} .
\end{equation}

To obtain the required distribution of the concentration of
impurity interstitials for nonzero condition on the surface of a
semiconductor, it is necessary to combine expression
\eqref{Solution} with the well-known solution of the boundary
value problem \eqref{Normalized equation}, \eqref{Dirichlet} with
zero initial condition \eqref{Initial condition}:

\begin{equation} \label{Hom}
C^{AI} (x,\; \theta )=C_{ZeS}^{AI} (x,\; \theta )+C_{S}^{AI}
\left[1-{\rm erf}(\frac{x}{2\sqrt{l_{AI}^{2} \theta } } )\right] .
\end{equation}

A similar procedure can be used to obtain a solution for the
reflecting boundary condition on the surface and zero Dirichlet
boundary condition in the bulk of a semiconductor:

\begin{equation} \label{Nonflow}
\left. \frac{\partial \, C^{AI} }{\partial \, x} \right|_{x=0} =0,
\qquad \qquad \qquad  C^{AI} (+\infty ,\; \theta )=0 .
\end{equation}

This solution has the following form:

\begin{equation} \label{Solution Nonflow}
C^{AI} (x,\; \theta )=\int _{0}^{\infty }G(x,\xi ,\theta) \,
C_{0}^{AI} (\xi )d\xi  ,
\end{equation}

\noindent where the Green function is

\begin{equation} \label{Green function Nonflow}
G(x,\xi ,\theta )=\frac{1}{2\sqrt{\pi l_{AI}^{2} \theta}}
\left\{\exp \left[-\frac{(x-\xi )^{2} }{4l_{AI}^{2} \theta}
\right]+\exp \left[-\frac{(x+\xi )^{2} }{4l_{AI}^{2} \theta}
\right]\right\} .
\end{equation}

The explicit expressions for the integrals in \eqref{Solution} and
\eqref{Nonflow} can be obtained using the modern software allowing
symbolic computation, such as ``Mathematica'' \cite{Mathematica},
``Mathcad'' \cite{Mathcad}, and others. Unfortunately, the
expressions obtained are too lengthy to be presented in this
paper.

The total concentration of impurity atoms after annealing can be
calculated by Eq. \eqref{Conservation law}. Integrating this
equation, we obtain

\begin{equation} \label{C Total}
C(x,t)=\frac{1}{\tau ^{AI} } \int _{0}^{t}C^{AI} (x,t) \, dt+C_{0} (x) ,
\end{equation}

\noindent where $C_{0} (x)$ is the initial distribution of
substitutionally dissolved impurity atoms at the initial stage of
annealing that can be approximated by the Gaussian distribution:

\begin{equation} \label{Gauss}
C_{0} (x)=C_{m} \exp \left[-\frac{\left(x-R_{p} \right)^{\, 2} }{2\Delta R_{p} ^{2} } \right] .
\end{equation}

Here $C_{m} $ is the maximal concentration of substitutionally
dissolved impurity.

Unfortunately, within the framework of the software for the
above-mentioned symbolic computation it is not possible to obtain
an explicit expression for integral \eqref{C Total} with $C^{AI}
(x,t)$ described by expression \eqref{Hom} or \eqref{Solution
Nonflow}. Therefore, the calculation of integral \eqref{C Total}
was carried out by an approximate numerical method using the
quadrature formula (Gauss 16-point formula)
\cite{Krylov-67,Davis-84}.

\section{Simulation of the interstitial redistribution of boron
implanted into silicon during low-temperature thermal treatments}
In Fig.~\ref{fig:Profiles} the calculated profiles of
ion-implanted boron after low-temperature annealing are presented
which show the change in the shape of the low concentration
``tail'' formed due to the interstitial diffusion for different
ratios between the average lifetime $\tau ^{AI}$ and the duration
of thermal treatment $t_{ann} $. It is supposed that silicon is
implanted with 1 keV boron ions to a dose of
1.8$\times$10${}^{13}$ ion/cm${}^{2}$ ($R_{p} $ = 0.0056 $\mu $m;
$\Delta R_{p} $ = 0.0038 $\mu $m \cite{Burenkov-85}) and then
subjected to annealing with duration of 10 min at a temperature of
750 $^{\circ}$C. The average migration length of nonequilibrium
boron interstitials has been chosen to be equal to 0.08 $\mu $m.
It is clearly seen from Fig.~\ref{fig:Profiles} that if the
average lifetime of impurity interstitials $\tau ^{AI} $ is
significantly shorter than the annealing duration $t_{ann} $, the
``tail'' in the boron concentration profile represents a straight
line in the case of the logarithmic axis of concentration. With
increase in the average lifetime $\tau ^{AI}$, the shape of the
``tail'' becomes convex upwards, being characterized by an
increasing slope angle in the bulk of a semiconductor similar to
the Gaussian distribution. Thus, the calculations presented in
Fig.~\ref{fig:Profiles} show clearly that for nonzero initial
distribution of interstitial impurity atoms the ``tail'' in the
low concentration region of impurity distribution has the form of
the Gaussian distribution even for one event of impurity
interstitial migration if $\tau ^{AI} \ge t_{ann} $, whereas in
the case of continuous generation of impurity interstitials it
occurs only in the case of numerous events of interstitial
migration \cite{Cowern-90,Cowern-91}.

\begin{figure}[!ht]
\centering {
\begin{minipage}[!ht]{15.4 cm}
{\includegraphics[scale=1.2]{fig1.eps}}
\end{minipage}}
\caption{Calculated boron concentration profiles after
low-temperature thermal treatment of implanted silicon substrate
for different ratios between the average lifetime $\tau ^{AI} $
and the duration of annealing $t_{ann}$} \label{fig:Profiles}
\end{figure}

It follows from the experimental data that the ``tail'' in the
boron concentration profile after low-temperature treatment of
ion-implanted layer can have a shape of a straight line
\cite{Napolitani-99,Cristiano-04,Hamilton-07} as well as a convex
form characteristic for the Gaussian distribution
\cite{Huang-97,Hofker-75,Yeong-08,Jain-02} if the concentration
axis is logarithmic. For example, in Fig.~\ref{fig:Huang} the
boron concentration profile is presented which was measured in
\cite{Huang-97} by a method of the secondary ion mass spectroscopy
(SIMS). Both the p-type and n-type Czochralski grown (CZ)
commercial silicon wafers with conductivities of 4-6 $\Omega$cm
were used. Boron was implanted at room temperature with an energy
of 40 keV to a dose $Q$ of 3$\times$10${}^{14}$ cm${}^{-2}$. SIMS
profile of the implanted boron after annealing at 750 ${^\circ}$C
with duration $t_{ann}$ = 1 h is presented in
Fig.~\ref{fig:Huang}. by filled circles. It can be seen from
Fig.~\ref{fig:Huang} that the maximal boron concentration after
implantation $C_{m}$ = 3.04$\times$10$^{7}$ $\mu $m$^{-3}$ is near
the limit of boron solubility in silicon $C_{sol}$ =
2.33$\times$10$^{7}$ $\mu $m$^{-3}$ for a temperature of 750
$^{\circ}$C \cite{Solmi-01}. According to \cite{Haddara-00}, the
boron diffusivity of substitutionally dissolved atoms $D_{i}$ for
this temperature is equal to 2.658$\times$10$^{-10}$ $\mu
$m$^{2}$/s. Then, for the thermal treatment for 1 h the
characteristic diffusion length of impurity redistribution is
$L_{i} =\sqrt{D_{i} t_{ann} } $ = 9.78$\times$10${}^{-4}$ $\mu $m
or it is approximately equal to 1 nm. On the other hand, it
follows from Fig.~\ref{fig:Huang} that the actual $L_{i} $ is
approximately equal to 0.1 $\mu $m, i.e., 100 times longer. If we
suppose that boron diffusion occurs due to the formation,
migration, and dissociation of the ``impurity atom -- intrinsic
point defect'' pairs, it is necessary to accept that the average
concentration of nonequilibrium point defects responsible for
impurity diffusion is approximately 10$^{4}$ times higher than the
thermally equilibrium value. Not rejecting the possibility of such
a strong radiation-enhanced diffusion, we shall carry out modeling
of the redistribution of ion-implanted boron based on a more
natural mechanism of migration of nonequilibrium impurity
interstitials.

\begin{figure}[!ht]
\centering {
\begin{minipage}[!ht]{15.4 cm}
{\includegraphics[scale=1.2]{fig2.eps}}
\end{minipage}}
\caption{Calculated boron concentration profile (solid line) after
thermal treatment of implanted silicon substrate at 750
$^{\circ}$C for 60 min. Gaussian distribution (dotted line - total
boron concentration and dashed line - concentration of
interstitial boron atoms) was used to approximate the initial
impurity profile. The dash-dotted curve represents interstitial
boron after annealing. The experimental data (impurity
distribution after annealing represented by filled circles) are
taken from Ref. \cite{Huang-97}} \label{fig:Huang}
\end{figure}

The following values of the model parameters were used to provide
the best fit of the calculated boron concentration profile to the
experimental one: \textbf{The parameters prescribing the initial
distribution of implanted boron:} $Q$ = 3.2$\times$10$^{14}$
cm$^{-2}$; $R_{p} $ = 0.145 $\mu $m; $\Delta R_{p} $ = 0.042 $\mu
$m; the fraction of the boron atoms in the interstitial position
$p^{AI} $ = 34.2 \%. \textbf{The parameters specifying the process
of interstitial diffusion:} the average migration length of boron
interstitials $l_{AI} $ = 0.11 $\mu $m. The reflecting boundary
condition is imposed on the surface of a semiconductor when
describing diffusion of boron interstitials. It is also supposed
that the average lifetime of nonequilibrium impurity interstitials
$\tau ^{AI} $ is equal to the duration of annealing $t_{ann} $ = 1
h. It is worth noting that the parameters prescribing the initial
distribution of implanted boron is approximately equal to the
values tabulated in \cite{Burenkov-85}\textbf{:} $R_{p} $ = 0.131
$\mu $m; $\Delta R_{p} $ = 0.0451 $\mu $m; $S_{k} $ = - 0.8 $\mu
$m; $R_{m} $ = 0.143 $\mu $m, where $S_{k} $ and $R_{m} $ are
respectively the skewness and the position of a maximum of
impurity distribution as implanted which is described by the
Pearson type IV distribution \cite{Burenkov-85}.

It can be seen from Fig.~\ref{fig:Huang} that there is an
excellent agreement between the calculated total boron
concentration profile and boron profile measured by SIMS. A little
difference in the near surface region follows from the assumption
about the reflecting boundary for boron interstitials. In point of
fact part of impurity interstitials cross over the surface of a
semiconductor.

The modeling results of interstitial diffusion of ion-implanted
boron during a low-temperature annealing at a temperature of 800
$^{\circ}$C for 35 min are presented in Fig.~\ref{fig:Hofker}. The
experimental data of \cite{Hofker-75} were used for comparison. In
the Ref. \cite{Hofker-75} boron was implanted with an energy of 70
keV to a dose $Q$ of 10${}^{15}$ cm${}^{-2}$. For the energy used
in ion implantation, the parameters of the Pearson type IV
distribution are: $R_{p} $ = 0.219 $\mu $m; $\Delta R_{p} $ =
0.0606 $\mu $m; $S_{k} $ = -0.9 \cite{Burenkov-85}. It is worth
noting that for asymmetry $S_{k} $ = -0.9 the position of a
maximum of boron concentration $R_{m} $ = 0.236 $\mu $m is close
to the value $R_{p} $ = 0.219 $\mu $m. It means that, just as in
the previous case, one can neglect the asymmetry of impurity
distribution and describe the boron profile after implantation,
including the distribution of boron atoms in the interstitial
position, by the symmetric Gaussian distribution \eqref{Initial
condition} \cite{Burenkov-80}.

The diffusivity of the substitutionally dissolved boron atoms
$D_{i} $ is equal to 1.928$\times$10${}^{-9}$ $\mu $m$^{2}$/s for
a temperature of 800 $^{\circ}$C \cite{Haddara-00}. Then, the
characteristic diffusion length of impurity redistribution $L_{i}
=\sqrt{D_{i} t_{ann} } $ = 2.01$\times$10${}^{-3}$ $\mu $m or
approximately 2 nm for thermal treatment during 35 min. On the
other hand, it can be seen from Fig.~\ref{fig:Hofker} that the
actual value of $L_{i}$ is approximately 0.1 $\mu $m, i.e., 50
times longer. To provide this value of $L_{i} $, the time-average
concentration of the nonequilibrium point defects responsible for
the impurity diffusion should be 2.5$\times$10$^{3}$ times higher
than a thermally equilibrium value. It is necessary to note that
in the case of radiation-enhanced diffusion of impurity atoms, due
to the formation, migration, and dissociation of ``impurity atom
-- intrinsic point defect'' pairs, all impurity atoms in the
``tail'' region should be substitutionally dissolved, i.e., to be
electrically active. However, the experimental data of
\cite{Hofker-75} show that the significant fraction of boron atoms
is electrically inactive in the ``tail''. This phenomenon is
easily explained within the framework of the interstitial
diffusion mechanism described above if the lifetime of the
interstitial boron atoms $\tau ^{AI}$ is near or longer the
annealing duration $t_{ann}$. Indeed, it follows from the later
condition that a significant part of boron atoms are staying in
the interstitial position, i.e. they are electrically neutral.

\begin{figure}[!ht]
\centering {
\begin{minipage}[!ht]{15.4 cm}
{\includegraphics[scale=1.2]{fig3.eps}}
\end{minipage}}
\caption{Calculated boron concentration profile (solid line) after
thermal treatment of implanted silicon substrate at 800
$^{\circ}$C for 35 min. Gaussian distribution (dotted line - total
boron concentration and dashed line - concentration of
interstitial boron atoms) was used to approximate the initial
impurity profile. The dash-dotted curve represents interstitial
boron after annealing. The experimental data (impurity
distribution after annealing represented by filled circles) are
taken from Ref. \cite{Hofker-75}} \label{fig:Hofker}
\end{figure}

The following values of the model parameters were used to provide
the best fit of the calculated boron concentration profile to the
experimental one (see Fig.~\ref{fig:Hofker}): \textbf{The
parameters prescribing the initial distribution of implanted
boron:} $Q$ = 1.12$\times$10${}^{15}$ cm${}^{-2}$; $R_{p} $ = 0.24
$\mu $m; $\Delta R_{p} $ = 0.054 $\mu $m; the fraction of the
boron atoms in the interstitial position $p^{AI} $ = 26.5 \%. It
can be seen in Fig.~\ref{fig:Hofker} that the maximal boron
concentration after implantation $C_{m} $ = 8.3$\times$10${}^{7}$
$\mu $m$^{-3}$ is more than 2 times higher than the limit of boron
solubility in silicon $C_{sol}$ = 3.431$\times$10${}^{7}$ $\mu
$m$^{-3}$ for a temperature of 800 $^{\circ}$C \cite{Solmi-01}.
\textbf{The parameters specifying the process of interstitial
diffusion:} the average migration length of boron interstitials
$l_{AI} $ = 0.14 $\mu $m. As in the previous simulation, the
reflecting boundary condition is imposed on the surface of a
semiconductor when describing diffusion of boron interstitials.
The average lifetime of nonequilibrium impurity interstitials
$\tau ^{AI} $ = 48,3 min is chosen to be longer than the duration
of annealing $t_{ann}$ = 35 min. It is worth noting that the
parameters prescribing the initial distribution of implanted boron
is approximately equal to the values listed in the
above-mentioned tables \cite{Burenkov-85}.

It can be seen from Fig.~\ref{fig:Hofker} that there is excellent
agreement between the calculated total boron concentration profile
and boron profile measured by SIMS. It is interesting to note that
the concentration of interstitial boron atoms is approximately
equal to the total boron concentration at the end of the ``tail''.
It means that this part of the ``tail'' is electrically inactive
that is also consistent with the experimental data
\cite{Hofker-75}.

This paper considers the diffusion of boron interstitial atoms
generated either during ion implantation or at the initial stage
of annealing. In this meaning the case of interstitial diffusion
under consideration is opposite to the investigations of
\cite{Cowern-90,Cowern-91,Velichko-07,Velichko-2011} where
continuous generation of impurity interstitials is supposed. It
follows from the simulation results obtained (see Figs. 2 and 3)
that the model of diffusion of previously generated boron
interstitials allows one to explain the formation of ``tails'' in
nonamorphized silicon layers during low-temperature annealing with
duration of 1 h or shorter. On the other hand, some increase in
the boron concentration in the ``tail'' region occurs for
annealing duration of 21 h at 800 $^{\circ}$C \cite{Hofker-75} in
comparison with the simulated boron profile for 1 h annealing
presented in Fig.~\ref{fig:Hofker}. We suppose that the additional
generation of boron interstitials for such long-time treatments
occurs due to the annealing or rearrangement of clusters or
radiation defects.

\section{Conclusions}
To explain the redistribution of ion implanted boron during
low-temperature annealing of nonamorphized silicon layers, a model
of interstitial impurity migration is proposed. In contrast to
other models of interstitial diffusion, it is supposed that
nonequilibrium boron interstitials are generated either during ion
implantation or at the initial stage of annealing and migration
inward and to the surface of a semiconductor during the basic
stage of annealing. It was shown that such kind of interstitial
diffusion results in a ``tail'' in the boron concentration profile
which has a form of a straight line for the logarithmic
concentration axis if the average lifetime of impurity
interstitials $\tau ^{AI} $ is significantly shorter than
annealing duration $t_{ann} $ and becomes convex upwards similar
to the Gaussian distribution with increasing $\tau ^{AI} $.

The calculated impurity concentration profiles are in excellent
agreement with the experimental data that describe redistribution
of implanted boron for low-temperature annealing at 750
$^{\circ}$C for 1 h and at 800 $^{\circ}$C for 35 min if $\tau
^{AI} $ is equal to 1 h and to 48.3 min, respectively, i.e., the
average lifetime of boron interstitials is equal or rather longer
than the duration of annealing. The average migration length of
impurity interstitial atoms is equal to 0.11 $\mu$m and to 0.14
$\mu$m for the annealing at temperatures 750 and 800 $^{\circ}$C,
respectively. The simulation results also show that 34.2 \% and
26.5 \% of the implanted boron atoms occupy interstitial position
at the initial stage of annealing.

It is worth noting that the experimental phenomenon of incomplete
electrical activation of boron atoms in the ``tail'' region is
naturally explained within the framework of the model proposed.
This fact and the excellent agreement with the measured boron
profiles give evidence in favor of the model considering the
formation of the main part of boron interstitials generated either
during ion implantation or at the initial stage of annealing if we
deal with low-temperature treatment of nonamorphized silicon
layers.


\section{Introduction}\label{Introduction}
	The purpose of this note is to study the Fatou--Julia dichotomy, not for the iterates of a single holomorphic endomorphism of $\mathbb C^k, \; k \ge 2$, but for a family $\mathcal{F}$ of such maps. The Fatou set of $\mathcal{F}$ will be by definition the largest open set where the family is normal, i.e., given any sequence in $\mathcal{F}$ there exists a subsequence which is uniformly convergent or divergent on all compact subsets of the Fatou set, while the Julia set of $\mathcal{F}$ will be its complement.
	\par\medskip\noindent
	We are particularly interested in studying the dynamics of families that are semigroups generated by various classes of holomorphic endomorphisms of $\mathbb C^k,\; k \ge 2.$ For a collection $\{\psi_{\alpha}\}$ of such maps let
	\[G=\langle \psi_{\alpha}\rangle\]
	denote the semigroup generated by them. The index set to which $\alpha$ belongs is allowed to be uncountably infinite in general. The Fatou set and Julia set  of this semigroup G will be henceforth denoted by $F(G)$ and $J(G)$ respectively. Also for  a holomorphic endomorphism  $\phi$ of $\mathbb C^k ,$ $F(\phi)$ and $J(\phi)$, will denote the Fatou set and Julia set  for the family of iterations of $\phi.$ The $\psi_{\alpha}$'s that will be considered in the sequel will belong to one of the following classes:
		\begin{itemize}
	\item $\mathcal{E}_k:$ The set of holomorphic endomorphisms of $\mathbb C^k$ which have maximal generic rank $k.$
	\item $\mathcal{I}_k:$  The set of injective holomorphic endomorphisms of $\mathbb C^k.$
	\item $\mathcal{V}_k:$ The set of volume preserving biholomorphisms of $\mathbb C^k.$
	\item $\mathcal{P}_k:$ The set of proper holomorphic endomorphisms of $\mathbb C^k.$
		\end{itemize}
	The main motivation for studying the dynamics of semigroups in higher dimensions comes from the results of Hinkkanen--Martin\cite{HM1} and Fornaess--Sibony \cite{FS}. While \cite{HM1} considers the dynamics of semigroups generated by rational functions on the Riemann sphere, \cite{FS} puts forth several basic results about the dynamics of the iterates of a single holomorphic endomorphism of $\mathbb C^k,\; k \ge 2.$ Under such circumstances, it seemed natural to us to study the dynamics of semigroups in higher dimensions.
	\par\medskip\noindent
	Section 2 deals with basic properties of $F(G)$ and $J(G)$ when $G$ is generated by elements that belong to $\mathcal{E}_k$ and $\mathcal{P}_k.$ The main theorem in Section 3 states that if $J(G)$ contains an isolated point, then $G$ must contain an element that is conjugate to an upper triangular automorphism of $\mathbb C^k.$ Finally we define recurrent domains for semigroups in Section 4 and provide a classification of such domains under some conditions which are generalizations of the corresponding statements of Fornaess--Sibony \cite{FS} for the iterates of a single holomorphic endomorphism of $\mathbb C^k,\; k\ge  2.$ The classification for recurrent Fatou components for the iterates of holomorphic endomorphisms of  $\mathbb P^2$ and $\mathbb P^k$ is studied in \cite{FS2} and \cite{Fornaess-Rong} respectively. In \cite{FS2} Fornaess--Sibony also gave a classification of recurrent Fatou components for iterations of H\'{e}non maps inside $K^+$, which was initially considered by Bedford--Smillie in \cite{BS2}. A  classification for non-recurrent, non-wandering  Fatou components of $\mathbb P^2$ is given  in  \cite{Weickert}, whereas  a classificiation of invariant Fatou components for nearly dissipative H\'{e}non maps is studied in \cite{Peters-Lyubich}.

	\medskip

	\noindent {\bf Acknowledgement:} We would like to thank Kaushal Verma for valuable discussions and comments.

		\section{Properties of the Fatou set and Julia set for a semigroup G}\label{section 1}
		In this section we will prove some basic properties of the Fatou set and the Julia set for semigroups.
		\begin{prop}\label{lem1}
			Let $G$ be a semigroup generated by elements of $\mathcal{E}_k$ where $k \ge 2$ and for any $\phi \in G$ define
			\[\Sigma_{\phi}=\{z \in \mathbb C^k: \det{\phi(z)}=0\}.\] Then for every $\phi \in G$
			\begin{enumerate}
				\item[(i)] $\phi(F(G)\setminus \Sigma_{\phi})\subset F(G).$
				\item[(ii)] $J(G)\cap \phi(\mathbb C^k)\subset \phi(J(G))$, if $G$ is generated by elements of $\mathcal{P}_k$ or $\mathcal{I}_k.$
			\end{enumerate}

		\end{prop}

		\begin{proof}
			Note that $\phi \in G$ is an open map at any point $z \in F(G)\setminus \Sigma_{\phi}.$ Since for any sequence $\psi_n \in G$, the sequence $\psi_n \circ \phi$ has a convergent subsequence around a neighbourhood of $z$ (say $V_z$), $\psi_n$ also has a convergent subsequence on the open set $\phi(V_z)$ containing $\phi(z).$

			\smallskip

			\noindent Now if $G$ is generated by elements of $\mathcal{P}_k$ or $\mathcal{I}_k$ then $\phi$ is an open map at every point in $\mathbb C^k.$ Then the Fatou set is forward invariant and hence the Julia set is backward invariant in the range of $\phi.$
		\end{proof}

	\noindent A family of endomorphisms $\mathcal{F}$ in $\mathbb C^k$ is said to be locally uniformly bounded on an open set $\Omega \subset \mathbb C^k$ if for every point there exists a small enough neighbourhood of the point (say $V\subset \Omega$) such that $\mathcal{F}$ restricted to $V$ is bounded i.e.,
	\[\|f\|_{V}=\sup_{V}|f(z)|<M\]for some $M>0$ and for every $f \in \mathcal{F}.$

		\begin{prop} \label{bound}
			Let $G=\langle\phi_1,\phi_2,\hdots,\phi_n\rangle$, where each $\phi_j \in \mathcal{E}_k$ and let $\Omega_G$ be a Fatou component  of $G$ such that $G$ is locally uniformly bounded on $\Omega_G.$ Then for every $\phi \in G$ the image of $\Omega_G$ under $\phi$ i.e., $\phi(\Omega_G)$ is contained in Fatou set of $G.$

		\end{prop}

		\begin{proof}

			Let $K \subset\subset \Omega_G$, i.e., $K$ is a relatively compact subset of $\Omega_G,$ then

			\smallskip

			\noindent {\it Claim:-}  $\Omega_G$ is a Runge domain i.e., $\hat{K} \subset \Omega_G$ where
			\[\hat{K}:=\{z \in \mathbb C^k: |P(z)| \le \sup_{K}|P| ~\mbox{for every  polynomial}~ P\}.\]
			Let $K_{\delta}=\{z \in \mathbb C^k: ~\mbox{dist}(z,K)\le \delta\}$. Choose $\delta >0$ such that $K_{\delta} \subset\subset \Omega_G.$ Now note that $\hat{K_\delta}\subset \subset \mathbb C^k$ , $\hat{K_{\delta}}\supset \hat{K}$ and $G$ is uniformly bounded on $K_{\delta}.$ Pick $\phi \in G.$ Then there exists a polynomial endomorphism $P_{\phi}$ of $\mathbb C^k$ such that
			\begin{align*}
			|\phi(z)-P_{\phi}(z)| \le \epsilon ~\mbox{for every}~z \in \hat{K_{\delta}}\\
			\mbox{i.e.,} \hspace{1cm}|P_{\phi}(z)|-\epsilon \le |\phi(z)| \le |P_{\phi}(z)|+\epsilon .
			\end{align*}
			Hence
			\begin{align*}
			|\phi(z)| &\le |P_{\phi}(z)|+\epsilon \le \sup_{K_\delta}|P_{\phi}(z)|+\epsilon \\
			&\le \sup_{K_\delta}|{\phi}(z)|+2 \epsilon \le M+2\epsilon
			\end{align*}
			for every $z \in \hat{K_{\delta}}$ and some constant $M > 0.$ So $G$ is uniformly bounded on $\hat{K_{\delta}}$ and $\hat{K} \subset \Omega_G.$

			\smallskip

			\noindent Let $$\Sigma_i=\{z \in \mathbb C^k: \det{\phi_i(z)}=0\}$$ for every $1 \le i \le n$ and $$\Sigma=\bigcup_{i=1}^n \Sigma_i.$$ Thus $\phi_i $ for every $i$, where $1 \le i \le n$ is an open map in $\Omega_G\setminus \Sigma$. Hence $\phi_i(\Omega_G\setminus\Sigma)$ is contained inside a Fatou component say $\Omega_i$ and $G$ is locally uniformly bounded on each of $\Omega_i$ for every $1 \le i \le n$ i.e., each $\Omega_i$ is a Runge domain.

			\smallskip

			\noindent Now pick $p \in \Omega_G \cap \Sigma.$ Since $\Sigma$ is a set with empty interior, there exists a sufficiently small disc centered at $p$ say $\Delta_p$ such that $\overline{\Delta}_p\setminus \{p\} \subset \Omega_G \setminus \Sigma.$ Then $\phi_i(\overline{\Delta}_p\setminus \{p\}) \subset \Omega_i$ for every $1\le i \le n$ and since each $\Omega_i$ is Runge $\phi_i(p) \in \Omega_i$ i.e., $\phi_i(\Omega_G)$ is contained in the Fatou set for every $1 \le i \le n.$ Now for any $\phi \in G$ there exists a $m > 0$ such that
			\[\phi=\phi_{n_1}\circ \phi_{n_2}\circ\hdots\circ\phi_{n_m}\] where
			$1 \le n_j \le n$ for every $1 \le j \le m.$ Thus applying the above argument repeatedly for each $\phi_{n_j}(\tilde{\Omega}_j)$ where $G$ is locally uniformly bounded on $\tilde{\Omega}_j$ it follows that $\phi(\Omega_G)$ is contained in the Fatou set of $G$.
		\end{proof}

		\begin{prop}
			If $G=\langle\phi_1,\phi_2,\hdots,\phi_n\rangle$ where each $\phi_i \in \mathcal{E}_k$  for every $1 \le i \le n$ and let $\Omega_G$ be a Fatou component of $G$. Then for any $\phi \in G$ there exists a Fatou component of $G$, say $\Omega_{\phi}$ such that $\phi(\Omega_G) \subset \bar{\Omega}_{\phi}$ and
			\[\partial\Omega_G\subset \bigcup_{i=1}^n \phi_i^{-1}(\partial\Omega_{\phi_i}).\]
		\end{prop}

		\begin{proof}

		Let $\phi \in G$ and let $\Sigma_{\phi}$ denote the set of points in $\mathbb C^k$ where the Jacobian of $\phi$ vanishes. Since $\Omega_G \setminus \Sigma_{\phi}$ is connected it follows that $\phi(\Omega_G \setminus \Sigma_{\phi}) \subset \Omega_{\phi}$ where $\Omega_{\phi}$ is a Fatou component of $G$ and by continuity $\phi(\Omega_G) \subset \bar{\Omega}_{\phi}.$

		\smallskip

		\noindent Pick $p \in \partial \Omega_G$ such that $p \notin \partial\Omega_{\phi_i}$ for every $1 \le i \le n.$ Since $\phi_i(\Omega_G) \subset \bar{\Omega}_{\phi_i}$ , $\phi_i(p) \in \Omega_{\phi_i}$ for every $1 \le i \le n.$ So there exists  $V_{\phi_i}$ an open neighbourhood of $\phi_i(p)$ in $\Omega_{\phi_i}$ for every $i.$ Let $V_p$ be a neighbourhood of $p$ such that
		\[\bar{V}_p\subset\bigcap_{i=1}^n \phi_i^{-1}(V_{\phi_i}).\]
		 Let $\{\psi_n\}$ be a sequence in $G$ and without loss of generality it can be assumed that there exists a subsequence such that $\psi_n=f_n \circ \phi_1.$ Now $\phi_1(\bar{V}_p)$ is a compact subset in $\Omega_1$ and $f_n$ has a subsequence which either converges uniformly on $\phi_1(\bar{V}_p)$ or diverges to infinity. Thus $V_p$ is contained in the Fatou set of $G$ which is a contradiction!
		\end{proof}
		\noindent
		The next observation is an extension of the fact that if $\phi \in \mathcal{P}_k$, then $F(\phi)=F(\phi^n)$ for every $n > 0$ for the case of semigroups.
		\begin{defn}
		Let $G$ be a semigroup generated by endomorphisms of $\mathbb C^k.$ A sub semigroup $H$ of $G$ is said to have finite index if there is a finite collection of elements say $\psi_1,\psi_2,\hdots,\psi_
		{m-1} \in G $ such that
		\[G =\Big(\bigcup_{i=1}^{m-1} \psi_i \circ H\Big) \cup H.\]
		 The index of $H$ in $G$ is the smallest possible number $m.$
		\end{defn}
		\begin{defn}
		A sub semigroup $H$ of a semigroup $G$ of endomorphisms of $\mathbb C^k$ is of co--finite index if there is a finite collection of elements say $\psi_1,\psi_2,\hdots,\psi_{m-1} \in G $ such that either \[\psi \circ \psi_{j} \in H \; \mbox{or}\; \psi \in H\]
		for every $\psi \in G$ and for some $1 \le j \le m-1.$
		The index of $H$ in $G$ is the smallest possible number $m.$
		\end{defn}
		\begin{prop}\label{index}
		Let $G$ be a semigroup generated by proper holomorphic endomorphisms of $\mathbb C^k$ and $H$ be a sub semigroup of $G$ which has a finite (or co--finite) index in $G.$ Then $F(G)=F(H)$ and $J(G)=J(H).$
		\end{prop}
		\begin{proof}
		From the definition itself it follows that $F(G) \subset F(H).$ To prove the other inclusion, pick any sequence $\{\phi_n \}\in G$. Since  $H$ has a finite index  in $G$, there exists $\psi_i$, $1 \le i \le m-1$ such that
			\[G =\Big(\bigcup_{i=1}^{m-1} \psi_i \circ H\Big) \cup H.\]
			So without loss of generality one can assume that there exists a subsequence say $\phi_{n_k}$ with the property \[\phi_{n_k}=\psi_1 \circ h_{n_k}\] where $\{h_{n_k}\}$ is a sequence in $H.$ Now on $F(H)$, the sequence $\{h_{n_k}\}$ has a convergent subsequence. Hence, so do $\{\phi_{n_k}\}$ and $\{\phi_n\}$ as $\psi_1$ is a proper map in $\mathbb C^k.$
		\end{proof}
		\noindent
		Let $G$ be a semigroup $$G=\langle \phi_1,\phi_2,\hdots,\phi_m\rangle$$ where $\phi_i \in \mathcal{P}_k$, for every $1 \le i \le m$ and each of these $\phi_i$'s commute with each other, i.e., $\phi_i \circ \phi_j=\phi_j \circ \phi_i$ for $i \neq j.$ Let $H$ be a sub semigroup of $G$ defined as
		\[H=\langle \phi_1^{l_1},\phi_2^{l_2},\hdots ,\phi_m^{l_m}\rangle\]
		where $l_i>0$ for every $1 \le i \le m.$ Then $H$ has a finite index in $G$ and hence by Proposition \ref{index} $F(G)=F(H).$
		\begin{cor}
		Let $\phi_i$ be elements in $\mathcal{P}_k$ for $1 \le i \le m$, $l=(l_1,l_2,\hdots,l_m)$ a $m-$tuple of positive integers and $G_l=\langle\phi_1^{l_1},\phi_2^{l_2},\hdots, \phi_m^{l_m}\rangle.$ Then $F(G_l)$ and $J(G_l)$ are independent of the $m-$tuple $l$, if $\phi_i \circ \phi_j=\phi_j\circ\phi_i$ for every $1 \le i,j\le m,$ i.e., given two $m-$tuples $p$ and $q$, $F(G_p)=F(G_q).$
		\end{cor}
		\begin{proof}
		Since $G_l$ has a finite index in $G$ for every $m-$tuple $l=(l_1,l_2,\hdots,l_m)$, it follows that $F(G_l)=F(G)$ and $J(G_l)=J(G).$
		\end{proof}
		\begin{ex}
	    Let $G=\langle f,g \rangle$ where $f(z_1,z_2)=(z_1^2,z_2^2)$ and $g(z_1,z_2)=(z_1^2/a,z_2^2)$ where $a \in \mathbb C$ such that $|a|>1.$ Then it is easy to check that \[J(f)=\big\{|z_1|=1\big\} \times\big \{|z_2| \le 1 \big \} \cup \big\{|z_1|\le 1\big\}\times \big\{|z_2| =1\big\}\] and
	    \[J(g)=\big\{|z_1|=|a|\big\} \times \big\{|z_2| \le 1\big\} \cup \big\{|z_1|\le |a|\big\}\times \big\{|z_2| =1\big\}.\]
	    Now consider the bidisc $\{|z_1 | < 1, |z_2 | < 1\}.$ Clearly this domain is forward invariant under
	    both $f$ and $g$. This shows that $\{|z_1 | < 1, |z_2 | < 1\} \subset F(G)$. Similarly observe that
	    $$\{|z_2 | > 1\} \cup \{|z_1 | > |a|\} \subset F(G).$$ We claim that
	    \[\big\{ 1 \le |z_1| \le |a|\big\} \times \big\{ |z_2| \le 1 \big\} \subset J(G). \]
	    Note that $\{|z_1|=|a|,|z_2| \le 1\}$ is contained inside $J(G)$ and since $J(G)$ is backward invariant it follows that \[\{|z_1|=|a|^{1/2},|z_2| \le 1\} \subset f^{-1}(\{|z_1|=|a|,|z_2| \le 1\}) \subset J(G).\] So inductively we get that \[\{|z_1|=|a|^t,|z_2| \le 1\} \subset J(G)\] for any $t=k2^{-n}$ where $1 \le k \le 2^n$ and $n \ge 1.$ As $\{k2^{-n}: 1 \le k \le 2^n,\; n \ge 1\}$ is dense in $[0,1]$, it follows that $\{ 1 \le |z_1| \le |a|\} \times \{ |z_2| \le 1 \} \subset J(G).$ Thus the Julia set of the semigroup $G$ is not forward invariant and clearly from the above observations one can prove that
	    \[J(G)=\big\{ |z_1| \le 1 \big\} \times \big\{ |z_2| = 1 \big\}\cup\big\{ 1 \le |z_1| \le |a|\big\} \times \big\{ |z_2| \le 1 \big\}.\]
	    \end{ex}

		\begin{ex}
		Let $T_0 (z) = 1,\; T_1 (z) = z$ and $T_{n+1}(z) = 2z T_n (z)-T_{n-1}(z)$ for
		$n \ge 1$ and $G =\langle f_0 , f_1 , f_2 , \hdots  \rangle$, with $f_i (z_1 , z_2 ) = (T_i (z_1 ), z_2^2 )$ for $i \ge 0.$ Consider
		\[
		G_1 =\langle T_0 (z_1 ), T_1 (z_1 ), T_2 (z_1 ), ... \rangle,\; G_2 =\langle z_2^2 \rangle.\]
		Since any sequence in $G_1$ is uniformly unbounded on the complement of $[-1,1]$ it follows that
		\[J(G) = [-1, 1] \times\{|z_2 | \le 1\}.\]
		Also as $J(G_1)\subset \mathbb C$ is completely invariant so is $J(G).$
		\end{ex}
		\section{Isolated points in the Julia set of a semigroup G.}

		\begin{prop}\label{prop1}
		Let $G=\langle\phi_1, \phi_2, \hdots \rangle$ where each $\phi_i \in \mathcal E_k$. If the Julia set $J(G)$ contains an isolated point (say $a$) then there exists a neighbourhood $\Omega_a$ of $a$ such that $\Omega_a\setminus\{a\} \subset F(G)$ and $\psi \in G$ which satisfies  $\Omega_a \subset \subset \psi(\Omega_a).$
		In particular, if $G$ is  a semigroup generated by proper maps, then $\psi^{-1}(a)=a$.
		\end{prop}
		\begin{proof}
		Assume $a=0$ is an isolated point in the Julia set $J(G).$ Then there exists a sufficiently small ball $B(0,\epsilon)$ around $0$ such that $B(0,\epsilon)\setminus \{0\}$ is contained $F(G).$ Let $$A:=\{z: \epsilon/2\le|z|\le\epsilon\}.$$ Then $A \subset F(G).$

		\smallskip

		\noindent{\it Claim:} There exists a sequence $\phi_n \in G$ such that $\phi_n$ diverges to infinity on $A.$

		\smallskip

		\noindent Suppose not. Then for every sequence $\{\phi_n\} \in G$, there exists a subsequence  $\{\phi_{n_k}\}$ which converges to a finite limit in $A.$ By the maximum modulus principle
		\[\|{\phi_{n_k}}\|_{B(0,\epsilon)}<M.\]
		By the Arzel\'{a}--Ascoli Theorem it follows that $\phi_{n_k}$ is equicontinuous on $B(0,\epsilon)$, which contradicts that  $0 \in J(G).$

		\smallskip

		\noindent By the same reasoning as above there exists a sequence $\{\phi_n\} \in G$ such that it diverges uniformly to infinity on $A$ but does not diverge uniformly to infinity on $B(0,\epsilon)$, since it would again imply that $B(0,\epsilon)$ is contained in the Fatou set of $G.$  Thus there exists a sequence of points $x_n$ in $B(0,\epsilon)$ such that $\phi_n(x_n)$ is bounded  i.e.,$$|\phi_n(x_n)|< M$$ for some large $M>0.$ So we can choose a subsequence of this $\{\phi_n\}$ and relabel it as $\{\phi_n\}$ again such that it satisfies the following condition:
		\[\phi_n(x_n) \rightarrow q ~\mbox{and}~ x_n \rightarrow p \]
		where $p \in \overline{B(0,\epsilon)}.$

		\smallskip

		\noindent {\it Claim:} $p=0$.

		\smallskip

		\noindent Suppose not. Then $\phi_n(p)$ is bounded. Let $\widetilde{A}=\{z: \min(|p|, \epsilon/2)\le |z| \le \epsilon \}.$ Then $\widetilde{A} \supseteq A.$ Now $\phi_{n_k}(p)$ converges on $\widetilde{A}$, then $\phi_{n_k}$ on $\widetilde{A}$ converges to a finite limit, and hence on $A$ by the maximum modulus principle. This is a contradiction!

		\smallskip

		\noindent Since ${\phi_{n}|}_{\partial B(0,\epsilon)} \rightarrow \infty$ for large $n$ $$\|{\phi_n} \|_{\partial B(0,\epsilon)} \gg |q|.$$

			\noindent Thus for a sufficiently large $R>0 $ and $n$   $$B(0,|q|+R)\cap \phi_n(B(0,\epsilon))\neq \emptyset.$$ Now, if $B(0,\epsilon) \nsubseteq \phi_n(B(0,\epsilon))$, then $B(0,|q|+R)\nsubseteq \phi_n(B(0,\epsilon))$ since $B(0,\epsilon) \subset B(0,|q|+R) $ for large $R>0.$ Then there exists $y_n \in \partial B(0,\epsilon)$ such that $|\phi_n(y_n)| <|q|+R$, which is not possible. Hence $B(0,\epsilon) \subset \subset \phi_n(B(0,\epsilon))$ for sufficiently large $n.$ Relabel this $\phi_n$ as $\psi$ and consider the neighbourhood $\Omega_0$ as $B(0,\epsilon).$

		\smallskip

		\noindent Since $0 \in B(0,\epsilon)\subset \psi(B(0,\epsilon))$, there exists $\alpha \in B(0,\epsilon)$ such that $\psi(\alpha)=0.$ From Proposition \ref{lem1}  it follows that $\alpha=0.$

		\end{proof}
		\begin{thm}\label{iso}
		 Let $G=\langle\phi_1, \phi_2, \hdots \rangle$ where each $\phi_i \in \mathcal I_k.$ If the Julia set $J(G)$ contains an isolated point, say $a$ then there exists an element $\psi \in G$ such that $\psi$ is conjugate to an upper triangular automorphism.
		\end{thm}

\begin{proof}
Without loss of generality we can assume that $a=0.$ Now by Proposition \ref{prop1} it follows that there exists a sufficiently small ball $B(0,\epsilon)$ around $0$ and an element $\psi \in G$ such that $B(0,\epsilon) \subset \subset \psi(B(0,\epsilon)).$ Since $\psi$ is injective map in $\mathbb C^k$, $\psi(B(0,\epsilon))$ is biholomorphic to $B(0,\epsilon)$ and hence we can consider the inverse i.e.,\[\psi^{-1}:\psi(B(0,\epsilon)) \to B(0,\epsilon).\] Note that $\psi(B(0,\epsilon))$ is bounded and $B(0,\epsilon)$ is compactly contained in $\psi(B(0,\epsilon)).$ Therefore there exists an $\alpha>1$ such that the map defined by
\[ \psi_{\alpha}=\alpha \psi^{-1}(z)\]
is a self map of the bounded domain $\psi(B(0,\epsilon))$ with a fixed point at $0.$ Then by the Carath\'{e}odory--Cartan--Kaup--Wu Theorem (See Theorem 11.3.1 in \cite{Krantz}) it follows that all the eigenvalues of $\psi_\alpha$ are contained in the unit disc. Hence $0$ is a repelling fixed point for $\psi$ and also is an isolated point in the Julia set of $\psi.$

\smallskip

\noindent Since $B(0,\epsilon)\setminus \{0\} \in J(G)$, $B(0,\epsilon)\setminus \{0\}$ is also contained in the Fatou set of $\psi$ and using the same argument as in the Proposition \ref{prop1} there exists a subsequence (say $n_k$) such that
\[\|\psi^{n_k}\|_{\partial B(0,\epsilon)} \to \infty \]
uniformly. Thus for any given $R>0$ there exists $k_0$ large enough such that $B(0,R) \subset \psi^{n_{k_0}}(B(0,\epsilon)).$ Hence $\psi$ is an automorphism of $\mathbb C^k$ and the basin of attraction of $\psi^{-1}$ at $0$ is all of $\mathbb C^k.$ Now by the result of Rosay--Rudin (\cite{RR1}) $\psi$ is conjugate to an upper triangular map.
\end{proof}
		\begin{rem}
		The proof here shows that there exists a sequence $\phi_n \in G$ such that each $\phi_n$ is conjugate to an upper triangular map.
		\end{rem}
		\noindent
		Recall that a domain $\omega$ is holomorphically homotopic to a point in a domain $\Omega$ if there exists a continuous map $h:[0,1]\times \bar{\omega}\to \Omega$ with $h(1,z)=z$ and $h(0,z)=p$ where $p \in \omega$ and $h(t,\centerdot)$ is holomorphic in $\omega$ for every $t \in [0,1].$
		\begin{prop}\label{prop2}
		Let $\phi$ be a non-constant endomorphism of $\mathbb C^k$ such that on a bounded domain $U \subset F(\phi)$, the map $\phi$ is proper onto its image, $U \subset \subset \phi(U)$ and $U$ is holomorphically homotopic to a point in $\phi(U)$ then
		\begin{enumerate}
		\item[(i)] $\phi$ has a fixed point, say $p$ in $U$.
		\item[(ii)] $\phi$ is invertible at its fixed points.
		\item[(iii)]The backward orbit of $\phi$ at the fixed point in $U$ is finite i.e, $O^- (p) \cap U$ is finite where
		\[O^-_{\phi} (p)=\{ z \in \mathbb C^k: \phi^n(z)=p, n \ge 1\}.\]
		\end{enumerate}
		\end{prop}
		\begin{proof}
		That the map $\phi$ has a fixed point $p$ in $U$ follows from Lemma 4.3 in \cite{FS}.
		\par\smallskip\noindent
		Without loss of generality we can assume $p=0$. Consider $\psi(z)=\phi(p+z)-p$ and $\Omega=\{z-p:z \in U \}.$ Then $\psi$ is the required map with the properties $\Omega \subset \subset \psi(\Omega)$ and $0$ is a fixed point for $\psi.$
		\par\smallskip\noindent
		Suppose $\psi$ is not invertible at $0,$ i.e., $A=D\psi(0)$ has a zero eigenvalue. Let $\lambda_i$, $1 \le i \le k$ be the eigenvalues of $A.$ Therefore there exist an $\alpha$ such that $0< \alpha < 1$  and $1 <m \le k$ such that $0=|\lambda_i|< \alpha$ for $1 \le i \le m$ and $|\lambda_i|> \alpha$ for $m< i \le k.$ Choose $\delta>0$ such that
		\[0 < \|D_{\mathbb C}\psi(z)-A\| < \epsilon_0=\min\Big\{\alpha,\big||\lambda_i|-\alpha\big|\Big\}\]
		for $z \in B(0, \delta)$ and $m< i \le k.$ Let $\Psi$ be a Lipschitz map in $\mathbb C^k$ such that
		\[Lip(\Psi)=\|A\|+\epsilon_0 \]
		and
		\[\Psi \equiv \psi \;\; \mbox{on} \; \; B(0,\delta).\]
		Now \[W_s^{\Psi}:=\{z \in \mathbb C^k:|\alpha^n \Psi^n(z)|\;\mbox{is bounded}\;\}\]
		can be realized as a graph of a continuous function (See \cite{Yoccoz}) $G_{\Psi}: \mathbb C^m \to \mathbb C^{k-m}$ such that $G_{\Psi}(0)=0.$ Since $${W_s^{\Psi}}={W_s^{\psi}} \; \text{on} \; B(0,\delta/2)$$
		$W_s^{\psi} \cap \Omega $ is an infinite non-empty set containing $0.$ Also ${\psi^{n_k}}_{|\bar{\Omega}} \to \psi_0$ for some sequence $n_k$ and $\psi_0$ is holomorphic on the component (say $F_0$) of $F(\psi)$ containing $\Omega$. Let \[W_1^{\psi}=\{z \in F_0:\psi^{n_k}(z)\to 0 \;\mbox{as}\; k \to \infty \}.  \]
		Then $ W_s^{\psi} \cap F_0 \subset W_1^{\psi} $ and \[W_1^{\psi}=\bigcap_{i=1}^k {\psi_{0,i}}^{-1}(0)\]
		where ${\psi_{0,i}}$ is the $i-$th coordinate function of $\psi_0.$ If $W_1^{\psi} \cap \partial\Omega=\emptyset $ then $W_1^{\psi} \cap\Omega$ and hence $ W_s^{\psi} \cap \Omega$ will have to be finite which is not true. Thus there exists a positive integer $n_0$ such that $\psi^{n_0}(\partial\Omega) \cap \Omega \neq \emptyset$ but by assumption it follows that $\Omega \subset \subset \psi^n(\Omega)$ for all $n \ge 1,$ i.e., $\psi^{n}(\partial\Omega) \cap \Omega=\emptyset$ for all $n > 0.$ This proves that $A$ has no zero eigenvalues.
		\par\smallskip\noindent
		Note that this observation also reveals that $W_1^{\psi} \cap \Omega $ has to be a finite set, and since
		\[O^-_{\psi}(0) \subset W_1^{\psi}\]
	    the backward orbit of $0$ under $\psi$  is finite.
		\end{proof}
		\noindent
		Now we can state and prove Theorem \ref{iso} for semigroups generated by the elements of $\mathcal{E}_k.$
			\begin{thm}
				 Let $G=\langle\phi_1, \phi_2, \hdots \rangle$ where each $\phi_i \in \mathcal{E}_k.$  If the Julia set $J(G)$ contains an isolated point (say $a$) then there exists a $\psi \in G$ such that $\psi$ is conjugate to an upper triangular automorphism.
				\end{thm}
		\begin{proof}
		Assume $a=0.$ Then as before by Proposition \ref{prop1} there exists a map $\psi \in G$ and a domain $\Omega$ such that $\Omega \subset \subset \psi(\Omega).$
		\par\smallskip\noindent
		If $0$ is in the Julia set of $\psi$ then $0$ is an isolated point in $J(\psi)$ and by applying Theorem 4.2 in \cite{FS}, it follows that $\psi$ is conjugate to an upper triangular automorphism.
		\par\smallskip\noindent
		Suppose $\Omega \subset F(\psi).$  By Proposition \ref{prop2}, $\psi$ has a fixed point in $\Omega$ i.e.,$\{\psi^n\}$ has a convergent subsequence in $\bar{\Omega}$.
		\par\smallskip\noindent
		{\it Case 1:} Suppose that $G=\langle\phi_1,\phi_2, \hdots\rangle$ where each $\phi_i \in \mathcal P_k.$
		\par\smallskip\noindent
		Applying Proposition \ref{prop1}, we have that $\psi^{-1}(0)=0$ and there exists $\psi \in G$ such that
		\begin{align}
		\Omega \subset \subset B(0,R) \subset \subset \psi(\Omega)
		\end{align}
		where $\Omega$ is a sufficiently small ball at $0$ and $R>0$ is a sufficiently large number. Now let $\omega$ is the component of $\psi^{-1}(B(0,R))$ in $\Omega$ containing the origin. Also from Proposition \ref{prop2} it follows that $0$ is a regular point of $\psi$, which implies that $\psi$ is a biholomorphism on $\omega.$ Define $\Psi_\beta$ on $\psi(\omega)$ as \[\Psi_\beta (z)=\beta \psi^{-1}(z)\] and note that $\Psi_\beta$ is a self map of $B(0,R)$ for some $\beta>1$ with a fixed point at $0.$ Then the eigenvalues of $D_{\mathbb C}{\Psi_{\beta}}(0)$ are in the closed unit disc, i.e., \[\beta |\lambda_i^{-1}| \le 1\] where $\lambda_i$ are eigenvalues of $A.$ Hence $0$ is a repelling fixed point for the map $\psi$ and $0 \notin F(\psi).$ Since $0$ is an isolated point in the Julia set of $\psi$, by Theorem 4.2 in \cite{FS} $\psi$ is conjugate to an upper triangular automorphism of $\mathbb C^k.$
		\par\smallskip\noindent
		{\it Case 2:} Suppose that $G=\langle\phi_1,\phi_2, \hdots\rangle$ where each $\phi_i \in \mathcal E_k.$
		\par\smallskip\noindent
		As before by Proposition \ref{prop1} there exists $\psi \in G$ such that $$\Omega \subset B(0,R) \subset \psi(\Omega)$$ and let $\omega$ be a component of $\psi^{-1} (B(0,R)) \subset \Omega.$ Then $\omega$ satisfies all the condition of Proposition \ref{prop2} and hence there exists a fixed point $p$ of $\psi$ in $\omega$ and $O^-_{\psi}(p)\cap \omega$ is finite.
		\par\smallskip\noindent
		{\it Claim:} $\psi^{-1}(p) \cap \omega=p$
		\par\smallskip\noindent
		Suppose not i.e., \[\#\{\psi^{-1}(p)\}=\text{the cardinality of}\; \psi^{-1}(p) =m\] and $m \ge 2.$ Let $a_1 \in \psi^{-1}(p)\setminus \{p\}$  in $\omega$ and define $$S_1=O^-_{\psi}(a_1) \cap \omega.$$ Then $S_1 \subset O^-_{\psi}(p)\cap \omega.$ Now choose inductively $a_n \in \psi^{-1}(a_{n-1}) \setminus \{a_{n-1}\}$ for $n \ge 2$ and define $$S_n=O^-_{\psi}(a_n) \cap \omega.$$ Then \[S_n \subset S_{n-1} \; \; \mbox{and} \; \; \bigcup_{i=1}^n S_i\subset O^-_{\psi}(p)\cap \omega\] for every $n \ge 2.$ Note that $a_n \notin S_n,$ otherwise there is a positive integer $k_n >0$ such that $\psi^{k_n}(a_n)=a_n$ i.e., $a_n$ is a periodic point of $\psi$, and $$\psi^{k_n+m}(a_n)=p$$ for any $m>n$. Since $O^-_{\psi}(p)\cap \omega$ is finite it follows that $S_n$ has to be empty for large $n$. This implies that there exists a $n_0 \ge 1$ such that $\psi^{-1}(a_{n_0})=a_{n_0}$ and $a_{n_0} \in \omega.$ But by Proposition \ref{prop2} $\psi$ is invertible at its fixed points which means that $a_{n_0}$ is a regular
value of $\psi$ and
		\[\#\{\psi^{-1}(a_{n_0})\}=m \ge 2\] which is a contradiction! Hence the claim.
		\par\smallskip\noindent
		Now by similar arguments as in the case of proper maps it follows that $\psi$ is a biholomorphism from $\omega$ to $B(0,R)$ and $p$ is a repelling fixed point of $\psi$ and hence lies in $J(\psi) \subset J(G).$ Since $\omega \cap J(G)=\{0\}$, we have $p=0$ which is an isolated point in the Julia set of $\psi$ and hence $\psi$ is conjugate to an upper triangular automorphism.
		\end{proof}
		\section{Recurrent and Wandering Fatou components of a semigroup G.}
		 As discussed in Section \ref{Introduction} we will be studying the properties of recurrent and wandering Fatou components of semigroup generated by entire maps of maximal generic rank on $\mathbb{C}^k$. The wandering and the recurrent Fatou components for a semigroup $G$ are defined as:

		\begin{defn}
		Let $G=\langle\phi_1,\phi_2,\hdots \rangle$ where each $\phi_i\in \mathcal{E}_k $. Given a Fatou component $\Omega$ of $G$ and $\phi\in G$, let $\Omega_{\phi}$  be the Fatou component of $G$ containing $\phi(\Omega\setminus \Sigma_\phi)$ where $\Sigma_{\phi}$ is the set where the Jacobian of $\phi$ vanishes. A Fatou component is  {\it wandering} if the set $\big\{ \Omega_{\phi}:\phi\in G\big\}$ contains infinitely many distinct elements.
		\end{defn}

		\begin{defn}
		Let $G=\langle\phi_1,\phi_2,\hdots \rangle$ where each $\phi_i\in \mathcal{E}_k $. A Fatou component $\Omega$ of $G$ is {\it recurrent} if for any sequence $\{g_j\}_{j\geq 1}\subset G$, there exists a subsequence $\{g_{j_m}\}$ and a point $p\in \Omega$ (the point $p$ depends on the chosen sequence) such that $g_{j_m}(p)\rightarrow p_0 \in \Omega$.
		\end{defn}

		\noindent
		Note that we assume here a stronger definition of recurrence than the existing definition for the case of iterations of a single holomorphic endomorphism of $\mathbb C^k.$ The natural extension of this definition to the semigroup set up would have been the following,  a Fatou component $\Omega$ is recurrent if there is a  point $p \in \Omega$ and a sequence $\phi_n \in \Omega$ such that $\phi_n(p) \to p_0,$ where $p_0 \in \Omega.$ If this definition of recurrence is adopted then it is possible that a {\it Recurrent} domain is{\it Wandering.}  In particular, Theorem 5.3 in \cite{HM1} gives an example of a polynomial semigroup $G=\langle \phi_1,\phi_2, \hdots \rangle$ in $\mathbb C$, such that there exists a Fatou component, (say $\mathcal{B}$, which is conformally equivalent to a disc), that is wandering, but returns to the same component infinitely often. This means that there exists sequences say $\phi_n^+ \in G$ and $\phi_n^- \in G$ such that $\phi_n^-(\mathcal{B}) \subset \mathcal{B}$ or $\phi_n^+(\mathcal{B})$ are contained in distinct Fatou components of $G.$ This example can be easily adapted in higher dimensions.
		\begin{ex}
  Consider the semigroup $\mathcal{G}=\langle \Phi_1, \Phi_2, \hdots, \rangle$  generated by the maps
\[\Phi_i(z,w)=(\phi_i(z), w^2)\] where $\phi_i$ are the polynomial maps as in Theorem 5.3 of \cite{HM1}. Let $\{\Phi_n^-\}_{n \ge 1} \subset G$ be the sequence that maps $\mathcal{B} \times \mathbb{D}$ into itself and $\{\Phi_n^+\}_{n \ge 1} \subset G$ be the sequence such that $$\Phi^+_i(\mathcal{B}\times \mathbb D) \cap \Phi^+_j( \mathcal{B}\times \mathbb D) = \emptyset$$ for every $i \neq j.$ Also $\mathcal{B}\times \mathbb D$ is a Fatou component of $\mathcal{G}$ as any point on the boundary of $\mathcal{B}\times \mathbb D$, is either in the Julia set of $G$ or in the Julia set of the map $z \to z^2$. Hence $\mathcal{B}\times \mathbb D$ is a Fatou component which is wandering, but may be recurring as well if we adapt the classical definition of recurrence.
		\end{ex}

		\noindent Hence we work with a stronger  definition of recurrence than the classical one. Next we provide an alternative description for recurrent Fatou components of $G$.
		\begin{lem}
		A Fatou component $\Omega$ is recurrent if and only if  for any sequence $\{\phi_j\}\subset G$, there exists a compact set $K\subset \Omega$ and a subsequence $\{\phi_{j_m}\}$  such that $\phi_{j_m}(p_{j_m})\rightarrow p_0 \in \Omega$ for a sequence $\{p_{j_m}\}\subset K$.
		\end{lem}
		\begin{proof}
		Take any sequence $\{\phi_j\}\subset G$. Then there exists a subsequence $\{\phi_{j_m}\}$ and points $\{p_{j_m}\}\subset K$ with $K$ compact in $\Omega$ such that $$\phi_{j_m}(p_{j_m})\rightarrow p_0 \in \Omega.$$ Without loss of generality we assume $p_{j_m}\rightarrow q_0 \in K$.
		It follows that $\phi_{j_m}(q_0)\rightarrow p_0 \in \Omega$ using the fact that any sequence of $G$ is normal on the Fatou set of $G$.
		\end{proof}

		\begin{prop}\label{recurrence_prop}
		  Let $G=\langle \phi_1,\phi_2,\hdots ,\phi_m\rangle$ where each $ \phi_i \in \mathcal{E}_k$ for every $1 \le i \le m$. If $\Omega$ is a recurrent Fatou component of $G$, then $G$ is locally bounded on $\Omega$. Moreover $\Omega$ is pseudoconvex and Runge.
		  \end{prop}
		  \begin{proof}
		  Assume $G$ is not locally bounded on $\Omega$. Then there exists a compact set $K\subset\Omega$  and $\{g_r\} \subseteq  G$  such that $\lvert g_r(z_r) \rvert > r$ with $z_r \in K$ for every $r \geq 1$. Clearly this can not be the case since $\Omega$ is a recurrent Fatou component, so we can always get a subsequence $\{g_{r_k}\}$ from the sequence $\{g_r\} \in G$ such that it converges to a holomorphic function uniformly on compact set in $\Omega$ and in particular on $K$. From the proof of Proposition \ref{bound}, it follows that local boundedness of $G$ on $\Omega$ implies that $\Omega$ is polynomially convex. Hence $\Omega$ is pseudoconvex.
		  \end{proof}

	\begin{thm}
	 Let $G= \langle \phi_1,\phi_2, \hdots \rangle$ where each $\phi_i \in \mathcal{E}_k.$ Assume that $\Omega$ is a {\it recurrent} Fatou component of $G.$ If there exists a $\phi \in G$ such that $\phi(\Omega)$ is contained in the Fatou set of $G$ i.e., $\phi(\Omega) \subset F(G)$ then one of the following is true
	 \begin{enumerate}
	  \item [(i)] There exists an attracting fixed point (say $p_0$) in $\Omega$ for the map $\phi.$
	  \item [(ii)] There exists a closed connected submanifold $M_\phi \subset \Omega$ of dimension $r_\phi$ with $1 \le r_\phi \le k-1$  and an integer $l_\phi >0$ such that
	  \begin{enumerate}
	  \item[(a)] $\phi^{l_\phi}$ is an automorphism of $M_{\phi}$ and $\overline{\{\phi^{nl_\phi}\}_{n \ge 1}}$ is a compact subgroup of ${\rm Aut}(M_\phi).$
	  \item[(b)] If $f \in \overline{\{\phi^n\}}$, then $f$ has maximal generic rank $r_\phi$ in $\Omega.$
	  \end{enumerate}
	  \item[(iii)] $\phi$ is an automorphism of $\Omega$ and $\overline{\{\phi^n\}}$ is a compact subgroup of ${\rm Aut}(\Omega).$
	 \end{enumerate}

	\end{thm}
	\begin{proof}
	 Since $\Omega \subset F(G)$, there exists a recurrent Fatou component of the map $\phi$ (say $\Omega_{\phi}$) such that $\Omega \subset \Omega_{\phi},$ i.e., there exists an integer $l\geq1$ such that
	 \[\phi^l(\Omega_\phi) \cap \Omega_{\phi}\neq \emptyset\;\; \text{and} \;\; \phi^{m}(\Omega_\phi) \cap \Omega_{\phi}= \emptyset \]
	 for $0 \leq m < l. $ So, if $l>1$ then there do not exist any $p \in \Omega$ such that any subsequence of $\{\phi^{lk+1}(p)\}_{k\geq1}$ converges to a point in $\Omega$. Hence $l=1$ and by assumption it follows that $\phi(\Omega) \subset \Omega.$

	 \medskip

\noindent Let $h$ be a limit function of $\{\phi^n\}$ of maximal rank (say  $r_\phi$). i.e.,
\[h(p)=\lim_{j \to \infty} \phi^{n_j}(p) \;\; \text{for every}\;\; p \in \Omega,\]
where $\{n_j\}$ is an increasing subsequence of natural numbers.

	 \medskip

	\noindent {\it Case 1:} If $r_{\phi}=0.$ Then $h(\Omega)=p_0$ for some $p_0 \in \Omega$ since by recurrence there exists a point $p \in \Omega$, such that $\phi^{n_j}(p) \to p_0$ and $p_0 \in \Omega.$ Also $h(p_0)=p_0.$  Then
	 \[ \phi(p_0)= \phi(h(p_0))=h(\phi(p_0))=p_0,\]
	i.e., $p_0$ is a fixed point of $\phi.$ As some sequence of iterates of $\phi$ converge to a constant function, $p_0$ is an attracting fixed point for $\phi.$

	\medskip

	\noindent {\it Case 2:} If $r_{\phi} \geq 1.$ Then there exists an increasing subsequence $\{m_j\}$ such that
	 \[ p_j=m_{j+1}-m_j \]
	  are increasing positive integers  and the sequences $\{\phi^{m_j}\}$ and $\{\phi^{p_j}\}$ converge uniformly to the limit functions  ${h}$  and $\tilde{h}$ respectively on the Fatou component $\Omega.$ Since by recurrence $h(\Omega) \cap \Omega \neq \emptyset$, if $p \in \Omega$ be such that $p =h(q)$ for some $q \in \Omega$ then
	  \[\tilde{h}(p)= \lim_{j \to \infty} \phi^{m_{j+1}-m_j}(p)=\lim_{j \to \infty}\phi^{m_{j+1}-m_j}(\phi^{m_j}(q))=p\]
	  Define \[ M=\{x \in \Omega : \tilde{h}(x)=x \}.\]
	  {\it Claim:} $M$ is a closed complex submanifold of $\Omega.$

	  \medskip

	  \noindent Since $h(\Omega) \cap \Omega \subset M$, $M$ is a variety of dimension $\ge r_\phi$. But by the choice of $h$, the generic rank of $\tilde{h} \le r_{\phi}$ and $M \subset \tilde{h}(\Omega) \cap \Omega.$ So the dimension of $M$ is $r_{\phi}.$ Now for any point in $M,$ the rank of the derivative matrix of ${\rm Id}-\tilde{h}$ is greater than or equal to $k-r_\phi$. Suppose for some $x \in M$ the rank of  $D({\rm Id}-\tilde{h})(x)>k-r_\phi,$ then there exists a small neighbourhood of $x$, say $V_x$ such that $V_x \subset \Omega$ and \[\text{rank of }{\rm Id}-\tilde{h}>k-r_\phi \;\; \text{for every }\;\; x \in  V_x.\]Then $\{{\rm Id}-\tilde{h}\}^{-1}(0) \cap V_x$ is a variety of dimension at most $r_\phi-1$ i.e., the dimension of $M$ is strictly less than $r_\phi,$ which is a contradiction. Thus the rank of ${\rm Id}-\tilde{h}$ is $k-r_\phi$ for every point in $M$ and hence $M$ is a closed submanifold of $\Omega.$

\medskip

\noindent {\it Step 1:} Suppose that $r_{\phi}=k.$

\medskip

\noindent Then clearly $M=\Omega$ and $\tilde{h}$ on $\Omega$ is the identity map. Let $h_2= \lim \phi^{p_j-1}.$ Then
\[\tilde{h}(x)=h_2 \circ \phi(x)=x, \; \; \text{for every}\;\; x \in \Omega\]
i.e., $\phi$ is injective on $\Omega$ and $\phi(\Omega)$ is an open subset of $\Omega.$ Suppose there exists an $x \in \Omega \setminus \phi(\Omega)$ then for a sufficiently small ball of radius $r>0$ with $B_r(x) \subset \Omega$
\[
\phi^l(\Omega) \cap B_r(x)=\emptyset \;\;\text{for every}\;\; l \ge1.
\]
This contradicts that $\phi^{p_j} (x)\to x.$ Hence $\phi$ is surjective on $\Omega$ and hence an automorphism of $\Omega.$

\medskip

\noindent {\it Step 2:} Suppose that $ 1 \le r_{\phi} \le k-1. $ Let $ M_\phi  $ denote an irreducible component of $ M. $ For every $ q \in M_{\phi}  $,  it follows that $ \phi^{p_j}(q) \to q $ as $j \to \infty.$ Since $  \phi(\Omega) \subset \Omega $, we get $\phi^n(q) \in \Omega$ for every $n \ge 1$ and
\[ \tilde{h} \circ \phi^n(q)=\phi^n \circ \tilde{h}(q)=\phi^n(q) \; \text{for every}\; q \in M_{\phi},\]
i.e., $\phi^n(M_\phi) \subset M$ for every $n \ge 1.$

\medskip

\noindent{\it Claim:} There exists a positive integer $l_\phi$ such that $ \phi^{l_{\phi}}(M_{\phi}) \subset M_{\phi} .$

\medskip

\noindent Let $p_0 \in M_\phi$ and $ \Delta \subset \Omega$ be a polydisk at $ p_0 $ such that $\Delta$ does not intersect the other components of $M_{\phi} . $ Now choose $\Delta' \subset \Delta$, a sufficiently small polydisk such that $\tilde{h}(\Delta') \subset \Delta.$ Then $\omega =\tilde{h}(\Delta') \subset M_\phi$ is a $r_\phi-$ dimensional manifold. Let $ \Delta'' $ be a $ r_\phi -$ dimensional polydisk inside $ \omega $ and   $ \{w_l\}_{l \ge 1}$ be a sequence in $\Delta''$ such that it converges to some $ w_0 \in  \Delta''. $ But $\phi^{p_j}(w_{p_j}) \to w_0$ as $j \to \infty$ hence \[ \phi^{p_j}(M_\phi) \cap \Delta \neq \emptyset,\; \text{i.e.,}\; \phi^{p_j} (M_\phi)\subset(M_\phi)  \] for $j$ sufficiently large. Let $l_\phi$ be the minimum value  such that $M_\phi$ is invariant under $\phi^{l_{\phi}}.$

\medskip

\noindent{\it Claim:} $ \phi^{l_\phi} $ is an automorphism of $ M_\phi. $

\medskip

\noindent Without loss of generality there exists a sequence $ \{k_j\} $ such that $p_j=i_0+k_jl_\phi$ for some $0 \le i_0 \le l_\phi -1$ i.e.,
\[ \phi^{i_0} \circ \phi^{k_jl_\phi}(x) \to x \;\; \text{for every} \;\; x \in M_{\phi}.\] As $ M_{\phi} $ is invariant under $ \phi^{l_\phi} $, the sequence $x_j=\phi^{k_jl_\phi}(x)$ lies in $ M_{\phi}. $ Again as before let $\Delta_x$ be a sufficiently small neighbourhood such that $\Delta_x \subset \Omega$ and $\Delta_x$ does not intersect the other components of $M.$ Since $\phi^{i_0}(x_j)  \in \Delta_x \cap M_\phi$ for large $j$, $\phi^{i_0}(M_\phi) \subset M_\phi.$ But $0 \le i_0 \le l_\phi-1$, i.e., $i_0=0$ and $\{\phi^{k_jl_\phi}\}$ converges uniformly to the identity on $M_{\phi}.$ Let $\psi=\lim \phi^{(k_j-1)l_\phi}$ then \[ \phi^{l_\phi} \circ \psi(x)=\psi \circ \phi^{l_\phi}(x)=x \;\; \text{for every}\;\; x \in M_\phi.\]
\noindent Hence $\phi^{l_\phi}$ is injective on $M_\phi$ and $\phi^{l_\phi}(M_\phi)$ is an open subset in the manifold $M_\phi$. Now as in {\it Step 1} observe that $\phi^{k_jl_\phi}$ converges to the identity on $M_\phi$ for an unbounded sequence $ \{k_j\} $, so $\phi^{l_\phi}$ is also surjective on $ M_{\phi} $. Thus the claim.

\medskip

\noindent Let $Y=\{\phi^{nl_\phi}\}_{n \ge 1} \subset {\rm Aut}(M_\phi).$

\medskip

\noindent {\it Claim:} $\bar{Y}$ is a locally compact subgroup of ${\rm Aut}(M_\phi).$

\medskip

\noindent For some $\Psi \in Y$ and for a compact set $K \subset M_\phi$ consider the neighbourhood of $\Psi$ given by
\[V_\Psi (K, \epsilon)= \{\psi \in {\rm Aut}(M_\phi): \|\psi(z)-\Psi(z)\|_{K} < \epsilon \}.\]
One can choose $\epsilon$ and $K$ sufficiently small such that for every  sequence $\psi_j \in V_\Psi (K, \epsilon)$ there exists an open set $U \subset \Omega$ such that $\psi_j(U \cap M_\phi) \subset \bar{V}  \cap M_\phi \subset \Omega$, where $V$ is some open subset of $\Omega.$

\medskip

\noindent Since $\psi_j=\phi^{n_j l_\phi}$ for a sequence $\{n_k\}$ and $\Omega$ is a Fatou component, $\psi_j$ has a convergent subsequence in $\Omega.$ We choose appropriate subsequences such that the  limit maps $$ \Psi_1=\lim_{j \to \infty } \phi^{n_jl_{\phi}} \;\;\text{and}\;\; \Psi_2=\lim_{j \to \infty} \phi^{(k_j-n_j)l_\phi} $$ is defined on $\Omega.$ Also as $M_\phi$ is closed in $\Omega$,  $\Psi_i(M_\phi) \subset \overline{M_\phi}$ for every $i=1,2$ where $ \overline{M_\phi} $ denote the closure of $ M_\phi $ in $ \mathbb C^k. $
Then $\Psi_1(U)  \subset \Omega$ and
\begin{align}\label{injective}
\Psi_2 \circ \Psi_1(x)=x \;\; \text{for every}\;\; x \in U \cap M_\phi.
\end{align}
Since $\Psi_1$ on $M_\phi$ is a limit of automorphisms of $M_\phi$, the  Jacobian of $\Psi_1$ on the manifold $M_\phi$ is either non-zero  at every point of $M_\phi$ or vanishes identically. But by (\ref{injective}),  $\Psi_1$ restricted to $U \cap M_{\phi}$ is injective, which is open in the manifold $M_\phi$ i.e., $\Psi_1$  is an open map of $M_\phi$ and $\Psi_1(M_\phi) \subset M_{\phi}.$ So  (\ref{injective}) is true for every $x \in M_\phi.$  Now by the same arguments it follows that  $\Psi_2$
is an injective map from $M_\phi$ such that $\Psi_2(M_\phi) \subset M_{\phi}.$ Hence
\[\Psi_2 \circ \Psi_1(x)=\Psi_1 \circ \Psi_2(x)=x \;\; \text{for every}\;\; x \in M_\phi,\]
i.e. $\Psi_1$ is an automorphism of $M_\phi.$ This proves that $\bar{Y}$ is a locally compact  subgroup of ${\rm Aut(M_\phi)}.$

\medskip

\noindent Now since $M_\phi$ is a complex manifold and $\bar{Y}$ is a locally abelian subgroup of automorphisms of $M_\phi$, by Theorem A in \cite{Bochner}, it follows that $\bar{Y}$ is a Lie group. Hence the component of $\bar{Y}$ containing the identity is isomorphic to $\mathbb T^l \times \mathbb R^m.$ Suppose $\Psi$ is the isomorphism,  then for some $n >0$, $\Psi(a,b)=\phi^{nl_\phi}$. Now if $b \neq 0$, then there does not exist an increasing sequence of $k_j$ such that $\phi^{k_j l_\phi}$ converges to identity. This proves that the component of $\bar{Y}$ containing the identity is compact and hence any component of $\bar{Y}$ is compact by the same arguments. Also as $M_\phi$ is contained in the Fatou set, the number of components of $\bar{Y}$ is finite, thus $\bar{Y}$ is a compact subgroup of ${\rm Aut}(M_\phi).$

\medskip

\noindent If $r_\phi=k$, then $M_\phi$ is $\Omega$, then one can apply the same technique as discussed above to conclude that $\overline{\{\phi^n\}}$ is a closed compact subgroup of ${\rm Aut}(\Omega).$

\medskip

\noindent Finally, let $f$ be a limit of $\{\phi^n\}_{n \ge 1}$ i.e., \[f(p)=\lim_{j \to \infty} \phi^{n_j}(p) \;\; \text{for every} \;\; p \in \Omega.\]

\noindent {\it Claim:} The generic rank of $f$ is $r_{\phi}.$

\medskip

\noindent By the definition of recurrence it follows that $\Omega \subset \Omega_{\phi}$, where $\Omega_\phi$ is a periodic Fatou component for $\phi$ with period $1.$ Hence by Theorem 3.3 in \cite{FS} it follows that the limit maps of the set $\{\phi^n\}$ in $\Omega_\phi$ have the same generic rank (say $r$). But $\Omega$ is an open subset of the Fatou component $\Omega_\phi$, so the rank of limit maps restricted to $\Omega$ should be same, i.e., $r=r_\phi$ and each limit map of $\{\phi^n\}$ has rank $r_\phi.$
\end{proof}

\noindent By Proposition \ref{recurrence_prop} a semigroup $G$ is always locally uniformly  bounded on a recurrent Fatou component semigroup $G$. If $G$ is finitely generated by holomorphic endomorphisms of maximal rank $k$ in $\mathbb C^k$, then by Proposition \ref{bound} it follows that a recurrent Fatou component is mapped in the Fatou set by any elemnet of $G.$ Hence we have the following corollary.
\begin{cor}
	 Let $G= \langle \phi_1,\phi_2, \hdots,\phi_m \rangle$ where each $\phi_i \in \mathcal{E}_k$ for every $1 \le i \le m.$ Assume that $\Omega$ is a {\it recurrent} Fatou component of $G$ then for every $\phi \in G$ one of the following is true
	 \begin{enumerate}
	  \item [(i)] There exists an attracting fixed point (say $p_0$) in $\Omega$ for the map $\phi.$
	  \item [(ii)] There exists a closed connected submanifold $M_\phi \subset \Omega$ of dimension $r_\phi$ with $1 \le r_\phi \le k-1$  and an integer $l_\phi >0$ such that
	  \begin{enumerate}
	  \item[(a)] $\phi^{l_\phi}$ is an automorphism of $M_{\phi}$ and $\overline{\{\phi^{nl_\phi}\}_{n \ge 1}}$ is a compact subgroup of ${\rm Aut}(M_\phi).$
	  \item[(b)] If $f \in \overline{\{\phi^n\}}$, then $f$ has maximal generic rank $r_\phi$ in $\Omega.$
	  \end{enumerate}
	  \item[(iii)] $\phi$ is an automorphism of $\Omega$ and $\overline{\{\phi^n\}}$ is a compact subgroup of ${\rm Aut}(\Omega).$
	 \end{enumerate}

	\end{cor}

		\begin{ex}
		Let $G=\langle \phi_1,\phi_2 \rangle$ be a semigroup of entire maps in $\mathbb C^2$  generated by
		\[\phi_1(z,w)=(w, \alpha z-w^2) \; \; \mbox{and} \;\; \phi_2(z,w)=(zw,w)\]
		where $0<\alpha < 1.$ Then $G$ is locally uniformly bounded on a sufficiently small neighbourhood around the origin, and $\phi(0)=0$ for every $\phi \in G.$ So the Fatou component of $G$ containing $0$ (say $\Omega_0$) is recurrent. Now note that for $\phi_2$
		 $$r_{{\phi_2}}=1\;\; \mbox{ and} \;\;M_{\phi_2}=\{(0,w): w \in \mathbb C\} \cap \Omega_0,$$ whereas for $\phi_1$ the origin is an attracting fixed point. This illustrates the different behaviour of the sequences $\{\phi_1^n\}$ and $\{\phi_2^n\}$ (both of which are in $G$) on $\Omega_0.$

		 \medskip

		\noindent Note that for any other $\phi \in G$ which is not of the form $\phi_1^k,~k \ge 2$, contains a factor of $\phi_2$ at least  once. Since for a small enough ball (say $B$) around origin, $\phi_2$ is contracting, and $\phi_1(B) \subset B$
		so there exists  a constant $0<a_\phi<1$ such that $$|\phi(z)| \le a_{\phi} |z| \;\; \text{for every} \;\; z \in B,$$i.e., the origin is an attracting fixed point.
	  		\end{ex}
		\begin{prop}
		Let $G=\langle \phi_1,\phi_2,\hdots ,\phi_m\rangle$ where each $\phi_i\in \mathcal{V}_k$ for every $1 \le i \le m$ and let $\Omega$ be an invariant Fatou component of $G$. Then either $\Omega$ is recurrent or there exists a sequence $\{\phi_n\}\subset G$ converging to infinity.
		\end{prop}
		\begin{proof}
		If $\Omega$ is not recurrent, then there exists a sequence $\{\phi_n\}\subset G$ such that $\{\phi_n\} \rightarrow \partial \Omega \cup \{\infty\} $ uniformly on compact sets of $\Omega$. Assume $\{\phi_{n_k}\}$ converges to a holomorphic function $f$ on $\Omega$ . This implies that $f(\Omega)\subset \partial\Omega$ contradicting the assumption that each $\phi_{n_k}$ is volume preserving. Hence $\{\phi_{n_k}\}$ diverges to infinity uniformly on compact subsets of $\Omega$.
		\end{proof}
		\begin{prop}
		Let $G=\langle \phi_1,\phi_2,\hdots ,\phi_m \rangle$ where each $\phi_i\in \mathcal{V}_k$ for every $1 \le i \le m$ and let $\Omega$ be a wandering Fatou component of $G$. Then there exists a sequence $\{\phi_n\}\subset G$ converging to infinity.
		\end{prop}
		\begin{proof}
		Since $\Omega$ is wandering, one can choose a sequence $\{\phi_n \}\subset G$ so that
		\begin{equation}
		 \Omega_{\phi_n}\cap  {\Omega}_{\phi_m}=\emptyset \label{0}
		\end{equation}
		for $n\neq m$. If this sequence $\{\phi_n\}$ does not diverge to infinity uniformly on compact subsets, some subsequence $\{\phi_{n_k}\}$ will converge to a holomorphic function $h$ on $\Omega$. By abuse of notation, we denote $\{\phi_{n_k}\}$ still by $\{\phi_n \}$. Fix $z_0\in \Omega$. Then for any given $\epsilon$, there exists $\delta$ such that
		\begin{equation}
		\left|\phi_{n_0}(z)-\phi_n(z)\right|<\epsilon \label{1}
		\end{equation}
		for all $n\geq n_0$ and for all $z\in B(z_0,\delta)$. From (\ref{1}) it follows that vol$(\cup_{n\geq n_o}\phi_n(B(z_0,\delta)))$ is finite. On the other hand, since each ${\phi_n}$ is volume preserving and (\ref{0}) holds, we get \[\mbox{Vol}\Big(\bigcup_{n\geq n_o}\phi_n\big(B(z_0,\delta)\big)\Big) =+\infty.\] Hence we have proved the existence of  a sequence in $G$ converging to infinity.
		\end{proof}

		\section{Concluding Remarks}
		As mentioned in the introduction, the classification of recurrent Fatou components for iterations of holomorphic endomorphisms of complex projective spaces  has been studied in \cite{FS2} and \cite{Fornaess-Rong}. It would be interesting to explore the same question for semigroups of holomorphic endomorphisms of complex projective spaces.  The main theorem in \cite{FS2} and \cite{Fornaess-Rong} are proved under the assumption that the given recurrent Fatou component is also forward invariant. The analogue of such a condition in the case of semigroups is not clear to us since we are then dealing with a family of maps none of which is distinguishable from the other.
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