\section{Introduction} \label{Sec-1}

The interaction of high-power ultra-intense lasers and structured (both nanostructured~\cite{nano_2004,Nishikawa_applied_nano2004,nano_2011_pop,nanosphere_2012_PRL,Blanco_2017_nanostructured,Moreau_2019_nanowire,nanowire_2021_SR} and microstructured~\cite{Attosecond_Naumova,Klimo_2011_micro,Xiao_hollow_channel,microwire_hedp,Feng_micro_effects,Jiang_microengineering,ji2016towards,Stark2016PRL,yu2018generation,Snyder_microchannels,microtube_Beg_PRE}) targets has been a topic of great interest for its capability of enhancing the laser energy conversion efficiency~\cite{nano_2004}, high-order harmonics generation~\cite{HHG_pop_2010,HHG_2018_PRL}, charged particles (relativistic electrons and ions~\cite{nano_2011_pop,nanosphere_2012_PRL,microtube_Beg_PRE}) acceleration and the production of X-ray~\cite{nano_2004,Xray_micro_2016_PRL,xray_2017_pop,Rolles_xray_nano_2018} to $\gamma$-ray~\cite{Stark2016PRL,yu2018generation,gammaray_2018_pnas} radiation. The produced charged particle and photon beams have a wide range of applications from medical ion therapy~\cite{malka2004practicability,robson2007scaling}, nuclear physics~\cite{bychenkov1999nuclear,Bremsstrahlung_NRF} to photon-photon pair production~\cite{yu_2019,wang_pair_comment,PRApplied_power}. The microstructured targets with characteristic size of surface modulation comparable to laser wavelength are able to extensively absorb laser energy through various processes, including surface plasmon resonance excitation~\cite{PRL_nano_plasmon_2003}, multipass stochastic heating~\cite{Breizman_Alex_pop_2005} in dense clusters, prolonged acceleration distance in hollow channels~\cite{Xiao_hollow_channel} and microwires~\cite{microwire_hedp} and relativistic transparency in prefilled channels~\cite{Stark2016PRL}. In this paper, we examine the regime involving hollow micro-channels (see \cref{fig:Schematics}).

When ultra-intense lasers irradiate hollow micro-channels, strong laser fields directly act on electrons, dragging them into the channel and forming periodic electron bunches which then surf along with the laser pulse, gaining energy from the laser. Additionally, the presence of a channel guides the propagation of the electromagnetic fields, confines the electron motion and as a result, leads to a well collimated photon emission. This setup can serve as a promising electron source to further stimulate ion acceleration~\cite{microtube_Beg_PRE} as long as the ion expansion does not significantly impact electron acceleration~\cite{Wang_2019}. However, to successfully apply such an electron source in experiments, careful numerical investigations are needed in order to determine where the electron energy peaks, i.e. the location to cut off the channel and collect an electron source with an optimal spectrum.

To carry out such numerical studies, one can choose between 2D3V and 3D3V Particle-In-Cell (PIC) simulations. Both 2D~\cite{Klimo_2011_micro,Xiao_hollow_channel,Attosecond_Naumova,zou2017microchannel,Gong_hollow_channel} and 3D~\cite{ji2016towards,Jiang_microengineering,Jiang_PRE,Snyder_microchannels,Serebryakov_2019_3Dstructured} numerical simulations have been widely used to characterize laser interactions with structured targets. The appeal of 2D simulations is that they require significantly less computational resources than 3D simulations, so one is able to perform extensive parameter scans using 2D simulations. However, the field topology differs between 2D and 3D setups and it is not immediately clear how the differences impact the particle dynamics. It is then important to evaluate the dimensionality effects on a case-by-case basis. A few publications~\cite{stark_dimensionality_ion,Liu_dimensionality_ion,Xiao_2018_dimensionality_ion,Blanco_2017_nanostructured} have discussed the influences of simulation dimensionality on ion acceleration with various target geometries. But, to our knowledge, nobody has examined and explained the physics of dimensional effects on laser-irradiated hollow micro-channel targets.

In this paper, we show that the chosen dimensionality has a considerable effect on electron acceleration and the associated photon emission. First, we provide theoretical analysis to demonstrate that the dephasing rate between the accelerated electron and laser wave-fonts strongly depends on simulation geometry. Later we show numerical evidence to demonstrate that the dephasing rate differs with simulation dimensionality and such a difference is the key reason for the distinguished observation in terms of electron and photon beam generation. Through collectively evaluating generated particles and detailed particle tracking, we show that the occurrence of high phase velocity in the 3D setup terminates electron acceleration process early in space and time, and leads to a reduction of photon emission.

\begin{figure*}[!htp]
\centering
    \includegraphics[width=0.9\textwidth,trim={1cm 0.4cm 0cm 0cm},clip]{Figure1.png}
    \caption{\label{fig:Schematics} Laser-irradiated hollow targets in 2D and 3D. (a) 2D setup where a linearly polarized two-dimensional Gaussian pulse interacts with a two-dimensional hollow plasma channel. (b) 3D setup where a linearly polarized and cylindrically symmetric Gaussian pulse interacts with a hollow cylindrical target.}
\end{figure*}

\section{Phase velocity in 2D and 3D waveguides}

Previous studies\cite{Xiao_hollow_channel,Wang_2019,Gong_hollow_channel} have shown that, in a hollow channel without significant ion expansion, the dominant contributor to electron acceleration is the electric field in the direction of the laser propagation, i.e. the longitudinal field $E_x$. The corresponding structure of propagating electromagnetic fields can be characterized as TM (transverse magnetic) modes. The wave equation of TM modes can be written as
\begin{equation}
    \bigg(\dfrac{\partial^2}{\partial y^2} + \dfrac{\partial^2}{\partial z^2}\bigg)E_x + \bigg(\dfrac{\omega^2}{c^2}-k^2\bigg)E_x = 0 ,
    \label{Eq:wave_equation}
\end{equation}
where $\omega$ is the wave frequency, $k$ is the wavenumber and $c$ is the speed of light. For a two-dimensional waveguide (shown in \cref{fig:Schematics}a), $E_x$ is a function of $y$ and $\partial E_x/ \partial z = 0$. \Cref{Eq:wave_equation} then becomes ${\partial^2}E_x/{\partial y^2} + (\omega^2/c^2-k^2) E_x =0$. We choose $E_x = E_0 sin(\pi y / R)$ as the TM-mode solution that matches the field structure in the incoming pulse (i.e. $E_x=0$ on axis) and the boundary conditions which requires $E_x(y = \pm R) = 0$. Here $R$ represents the radius of the plasma channel. The dispersion equation in the 2D waveguide is then given by

\begin{equation}
     \dfrac{\omega^2}{c^2} = k^2 + \dfrac{\pi^2}{R^2} .
     \label{Eq:2D_dispersion}
\end{equation}

For the 3D cylindrical waveguide (shown in \cref{fig:Schematics}b), it is convenient to rewrite \cref{Eq:wave_equation} in cylindrical form as
\begin{equation}
    \dfrac{1}{r}\dfrac{\partial}{\partial r} \bigg(r \dfrac{\partial E_x}{\partial r}\bigg)
 + \dfrac{1}{r^2}\dfrac{\partial^2 E_x}{\partial \psi^2} + \bigg(\dfrac{\omega^2}{c^2}-k^2\bigg)E_x = 0,
 \end{equation}
where $r$ is the axial distance and $\psi$ is the azimuth. Assuming a solution in the form of $E_x = f \sin(\psi)$, the resulting equation for $f$ then reads
\begin{equation}
    s^2 \dfrac{\partial^2 f}{\partial s^2} + s \dfrac{\partial f}{\partial s} + (s^2 -1) = f.
\end{equation}
Here $s \equiv \beta r$ and $\beta^2 = \omega^2/c^2 -k^2$. The solution for $f$ is given by $f = E_{\parallel} J_1(s) = E_{\parallel}J_1(\beta r)$ where $J_1(x)$ is a Bessel function of the first kind and $E_{\parallel}$ is the amplitude of the longitudinal field. At the boundary of the cylindrical waveguide, $f(r=R) = 0$ which yields $\beta R \approx 3.8$. The dispersion relation of the 3D cylindrical waveguide
is then written as
\begin{equation}
   \dfrac{\omega^2}{c^2} = k^2 + \dfrac{14.7}{R^2}.
   \label{Eq:3D_dispersion}
\end{equation}

It is convenient to derive a general expression for $v_{ph}$ of a propagating wave with the dispersion relations given in \cref{Eq:2D_dispersion,Eq:3D_dispersion}.
\begin{equation}
    u = \dfrac{v_{ph}}{c} = \dfrac{\omega}{kc} = \sqrt{1+\dfrac{\alpha^2}{R^2k^2}} \approx \sqrt{1+\dfrac{\alpha^2}{R^2k_0^2}},
    \label{Eq:combined_dispersion}
\end{equation}
where we set $k \approx k_0=\omega/c$, $\alpha^2 = \pi^2 \approx 9.9$ for the 2D channel and $\alpha^2 = 14.7$ for the 3D cylindrical channel. Subtracting the $v_{ph}$ from $c$, in the limit of $\alpha^2 \ll R^2 k_0^2$ we have
\begin{equation}
    \delta u = u - 1 \approx \dfrac{1}{2}\dfrac{\alpha^2}{R^2k_0^2}.
    \label{Eq:dephasing}
\end{equation}
$\delta u$ is a dimensionless parameter used to quantify the degree of supuerluminosity~\cite{Robinson_PoP_2015}; it can be understood as a dephasing rate, since it illustrates how quickly the local laser wave-front outpaces the electron in question.
The ratio of the dephasing rate for the case in 2D to that in 3D is
\begin{equation}
    \dfrac{\delta u_{3D}}{\delta u_{2D}} \approx 1.5.
\end{equation}
In the following sections we are going to demonstrate via numerical simulations that the lower dephasing rate in 2D leads to an overestimate of electron acceleration and $\gamma$-ray emission.

\section{Impact of dimensionality on electron acceleration}\label{impact_electron}

\begin{figure*}[htp!]
\centering
    \includegraphics[width=0.9\textwidth,trim={0cm 0.cm 0cm 0.0cm},clip]{Figure2.png}
    \caption{\label{fig:Electron_spectrum_2D3D} Time-resolved electron energy spectrum observed in (a) the 2D simulation (b) the 3D simulation. The colorbar represents the number of electrons collected onto a certain energy bin
    d$\varepsilon_e$. (c) The peak energy spectrum in 2D and 3D which occurred at $t=500$ fs (marked with red star) and $t = 255$ fs (marked with gray star) respectively. We define $t = 0$ fs as the time when the laser pulse reaches its peak amplitude in the focal plane at $x = 0$ $\mu$m in the absence of the target. Typical electron trajectories are plotted in (d) $y$-$t$ space for the 2D simulation (e) $r$-$t$ space for the 3D simulation. Here $r=\sqrt{y^2+z^2}$. The color on the trajectories represents electron relativistic energy.}
\end{figure*}

We model the electron acceleration through fully relativistic PIC simulations using the EPOCH code\cite{Epoch} which is available in both 2D and 3D. The target geometries implemented in the simulations are depicted in \cref{fig:Schematics}. In 2D, the target is a straight empty channel enclosed by two uniform plasma slabs. In 3D, the channel is enclosed by a cylindrical wall of plasma, with a channel diameter such that a slice along the target axis would be identical to the 2D setup. The 2D and 3D simulations share the same plasma composition, plasma density, laser intensity, temporal profile, and laser spot size. The laser intensity is set as $1.37 \times 10^{22} \ \rm{W/cm}^2$, corresponding to $a_0 = 100$. Here $a_0 \equiv |e|E_0/(m_e c\omega)$ is the normalized laser amplitude, where $E_0$ is the peak amplitude of the electric field in the incoming laser pulse, and $m_e$ and $e$ are the electron mass and charge. The laser pulse is always focused at the channel entrance. We choose gold as the original target material with a density of 1.5 g/cm$^3$. According to the field ionization model, the considered laser pulse is capable of ionizing gold atoms to the level of $Z = 69$. In the simulations, the target is pre-ionized accordingly to a plasma composed of Au$^{+69}$ (density 4 $n_{cr}$) and $e^-$ (density 276 $n_{cr}$) where $n_{cr} \equiv m_e\omega/(4\pi e^2)$ is the critical density. A detailed comparison of parameters used in the 2D and 3D simulations is listed \cref{table_PIC}. Note that although the target lengths are set differently, this is done such that in different dimensionalities the target is long enough for the electrons to reach their first energy peak.

\begin{table}
\caption{Parameters used in 2D and 3D PIC simulations. $^*$To calculate the laser power, we assume the length of third dimension in 2D simulations as 2 ${\upmu\mathrm{m}}$.}
\label{table_PIC}
\begin{tabular}{ |l|l|}
  \hline
  \multicolumn{2}{|c|}{Parameters shared by 2D and 3D simulations} \\
  \hline
  \multicolumn{2}{|l|}{\underline{\bf Laser pulse:} }\\
  Peak intensity & $1.37 \times 10^{22}$ W/cm$^2$ \\
  $a_0$ & 100\\
  Polarization & linearly along $\mathbf{\hat{y}}$\\
  Wavelength & $\lambda_L = 1~{\upmu\mathrm{m}}$ \\
  Location of the focal plane & $x = 0~{\upmu\mathrm{m}}$, surface of plasma\\
  Pulse temporal profile & Gaussian \\
  Pulse duration & \\
  (FHWM for intensity) & 30 fs\\
  Pulse width/focal spot  &  \\
  (FWHM for intensity) & $w_0 = 2.8~{\upmu\mathrm{m}}$\\
  \multicolumn{2}{|l|}{\underline{\bf Plasma:} }\\
  Composition & gold ions and electrons \\
  Channel radius & $R = 4.0~{\upmu\mathrm{m}}$ \\
  Target thickness & $d = 0.4~{\upmu\mathrm{m}}$\\
  Electron density & $n_e = 276 n_{cr}$ \\
  Ion mass to charge ratio & $197 m_p$ : 69 \\
  Ion mobility & mobile \\
  \hline
  \multicolumn{2}{|c|}{Parameters varying in 2D and 3D simulations} \\
  \hline
  Spatial resolution & {{2D:}} $100/{\upmu\mathrm{m}} \times 100/{\upmu\mathrm{m}}$ \\
  & {{3D:}} $50/{\upmu\mathrm{m}} \times 50/{\upmu\mathrm{m}} \times 50/{\upmu\mathrm{m}}$\\
  $\#$ of macro-particles/cell  &  {{2D:}} 100 for $e^-$, 5 for  $\rm{Au}^{+69}$\\
  & {{3D:}} 10 for $e^{-}$, 5 for $\rm{Au}^{+69}$\\
  laser geometry & 2D: symmetric about $y$-axis \\
  & 3D: cylindrical symmetry  \\
  laser power & 2D:  0.82 PW$^*$\\
  & 3D: 1.24 PW\\
  Target length & {{2D:}} $L = 350~{\upmu\mathrm{m}}$ \\
  & {{3D:}} $L = 150 {\upmu\mathrm{m}}$ \\
  \hline
\end{tabular}
\end{table}

\Cref{fig:Electron_spectrum_2D3D}(a) and (b) illustrate the time history of the electron energy spectrum observed in both 2D and 3D simulations. There exists more than one energy peak in both \cref{fig:Electron_spectrum_2D3D}(a) and \cref{fig:Electron_spectrum_2D3D}(b) and our focus is on the first energy peak which happens before any deceleration takes effect. It is clear that the maximum electron energy gain achieved in 2D significantly exceeds the gain observed in the 3D case. In fact, the first energy peak in 2D occurs at $t=500$ fs with $\varepsilon_e = 1920$ MeV while in 3D the peak occurs at $t=255$ fs with $\varepsilon_e =1240$ MeV. \Cref{fig:Electron_spectrum_2D3D}(c) gives a direct comparison of the peak spectra observed in the 2D and 3D simulations. In order to facilitate a comparison between the two simulations, we added a gray star to \cref{fig:Electron_spectrum_2D3D}(a) that represents the energy and time of the first peak from \cref{fig:Electron_spectrum_2D3D}(b). Evidently, the acceleration in 2D lasts longer, which results in a more energetic electron spectrum. Note that to make a quantitative comparison with the 3D simulations, we assume a uniform third dimension with a length of $2~{\upmu\mathrm{m}}$ for the 2D simulation.

To further understand the electron acceleration process, we tracked energetic electrons in both simulations. \Cref{fig:Electron_spectrum_2D3D}(d) and \Cref{fig:Electron_spectrum_2D3D}(e) illustrate the trajectories of representative electrons selected from both the 2D and 3D simulations. Plotted in the space of the transverse location ($y$ or $r$) and time, the trajectories are in agreement with the time history of electron spectrum given in \cref{fig:Electron_spectrum_2D3D}(a-b); the electron energies peak at the corresponding moments. Regardless of the dimensionality, the electrons surf along the channel wall while getting accelerated by longitudinal electric fields until reaching their first energy peak. However, the horizontal surfing of electrons in the 3D simulation terminates earlier due to its higher dephasing rate, which will be elaborated in the next section. It is worth noting that the second energy peak observed in \cref{fig:Electron_spectrum_2D3D}(a-b) is correlated with the electron motion of crossing the central axis, indicating an involvement of the transverse electric field in electron acceleration.

Through evaluating the electron energy spectrum and tracking individual electron motion, we have shown that the dimensionality of simulations significantly impacts electron acceleration. The 2D simulations tend to extend the electron acceleration process, leading to an overestimate of the maximum electron energy when compared to more realistic 3D simulations.

\section{Electric field profiles and phase velocity}

An electron travelling in the laser fields gains energy only while staying in the accelerating phase of the electric field. The electron can gain energy from both longitudinal ($E_{\parallel} = E_x$) and transverse ($E_{\perp} = E_y,\ E_z$) electric fields. The total work done by the electric fields on a given electron can be expressed as
\begin{equation}
 W_{tot} = W_{\parallel} + W_{\perp} =  -|e| \int_{-\infty}^{t} (E_{\parallel}v_{\parallel} + E_{\perp}v_{\perp}) \,dt{'} .
\end{equation}
Figure 3 shows the contributions of $W_{\parallel}$ and $W_{tot}$ to electron relativistic energy at the first peak by binning all electrons according to their energies. In the 2D simulation 95\% of the energy of energetic electrons ($\varepsilon_e > 500$ MeV) comes from the work done by the longitudinal electric fields and in the 3D case the quantity is 86\%. It is then reasonable to approximate
\begin{equation}
 W_{tot} \approx W_{\parallel} =  -|e| \int_{-\infty}^{t} E_{\parallel}v_{\parallel} \,dt{'} .
\end{equation}
This simply allows us to narrow down the investigation of electron acceleration to a single component of the electric fields.

\begin{figure} [htp!]
    \includegraphics[width=0.98\columnwidth,trim={0.2cm 0.1cm 0cm 0cm},clip]{Figure3.png}
    \caption{\label{fig:work_para_perp} Contributions to the electron relativistic energy by $E_{\parallel}$ ($W_{\parallel}$, red bars) and the electric fields (including both $E_{\parallel}$ and $E_{\perp}$, $W_{tot}$, green bars) in (a) the 2D simulation and (b) the 3D simulation. The snapshots are taken at $t=500$ fs and $t = 255$ fs respectively, corresponding to the first peak of electron energy spectra in \cref{fig:Electron_spectrum_2D3D}. The bar width in (a) and (b) is set as 75 MeV.}
\end{figure}

At ultra-high laser intensities, the dephasing rate $\delta u$ is approximately $(v_{ph}-c)/c$, since for a relativistic electron co-propagating with laser, $c-v_x \ll v_{ph}-c$. \Cref{fig:phase_v_traj}(a-b) describes the temporal profiles of the transverse electric fields $E_y$ recorded in a moving window. Note that $E_y$ and $E_x$ share the same wave mode and phase velocity. By tracking a fixed field segment, we find that $v_{ph} \approx 1.0031 \ c$ in the 2D simulation, and $v_{ph} \approx 1.0063 \ c$ in the 3D simulation. The dephasing rate in 2D is nearly two times lower than that in 3D, explaining the distinction between the electron energy gain seen in the two simulations. The duration for electrons staying in an accelerating phase of electric fields can be estimated by
\begin{equation}
    \delta t \approx 0.5 \lambda_{L} / (\delta u  \cdot c),
\end{equation}
where $0.5\lambda_L$ is the width of the accelerating phase. We find that $\delta t \approx$ 540 fs and 260 fs in 2D and 3D, matching well with the times found from the simulations, demonstrating the accuracy of the approximation used to calculate the phase velocity. The previously derived \cref{Eq:dephasing} however gives the analytical values of the phase velocity as $v_{ph} = 1.0078 \ c$ in 2D, and $v_{ph} \approx 1.0116 \ c$ in 3D. Despite the difference in numerical value, the same trend of an increase in phase velocity is consistent in both the analytical treatment and the numerical simulations. There are a number of factors that can lead to this discrepancy between the analytical calculations and the numerical simulations, for example: the analytical calculation assumes a perfectly conducting boundary and so requires the transverse fields to be zero at the channel edges\cite{Gong_hollow_channel}; sinusoidal waves are not a perfect match (though close) for the fields observed in the hollow channels. Our additional simulations with different target size $R$ show that as phase velocity varies with $R$, the ratio of $\delta u$ in 2D to $\delta u$ in 3D is preserved.

To further check how the phase velocity influences electron acceleration, we track representative electrons with respect to $E_{x}$ fields sampled by them, as illustrated in \cref{fig:phase_v_traj}(c-d). It is clear that the electrons remain accelerated when they stay in the favourable phase of $E_x$ fields (the negative fields colored in blue). After exiting the accelerating phase, the electron energy declines. As can be seen from the time scale in \cref{fig:phase_v_traj}(c-d) electrons in the 2D simulation are subject to far longer periods of acceleration than those in 3D, due to the lower phase velocity in 2D. The evolution of energy and longitudinal work of the chosen electrons is shown in \cref{fig:phase_v_traj}(e). At early moments (up to $\sim$260 fs), the curves of $W_{\parallel_{\ {\rm{2D}}}}$ and $W_{\parallel_{\ {\rm{3D}}}}$ almost overlap with each other implying that the amplitudes of accelerating fields in 2D and 3D are similar. It is then clear that the major cause for the smaller electron energy observed in the 3D simulation is the early termination of the acceleration process due to the higher dephasing rate.

\begin{figure*}[!htb]
    \includegraphics[width=0.99\textwidth,trim={0cm 0cm 0cm 0cm},clip]{Figure4.png}
    \caption{\label{fig:phase_v_traj} (a) Temporal profiles of $E_y$ fields on the central axis in (a) the 2D simulation (recorded at $y=0$) (b) the 3D simulation (recorded at $y=z=0$). The $E_y$ fields are plotted in a moving window which moves with the speed of light. Here $E_0$ with a value of $3.2\times10^{14} \ \rm{V/m}$ is the peak amplitude of the electric field in the incoming laser pulse. The black dashed lines show the segments used to determine $v_{ph}$ in each run. The trajectory of a typical high-energy electron is plotted together with the exact $E_x$ fields sampled by that electron in (c) the 2D simulation (d) the 3D simulation. (e) The comparison of relativistic electron energy and the longitudinal work between the electrons tracked in (c) and (d).}
\end{figure*}

\section{Influence of dimesionality on photon emission}

The focus of the discussion in the previous sections was the impact of simulation dimensionality on the laser-driven electron acceleration and generation of energetic electrons with energies of hundreds of MeV to a few GeV. These high-energy electrons are subject to emitting energetic photons (in x-ray and even up to the $\gamma$-ray range) while accelerating in laser and channel fields. In this section, we investigate how the photon emission changes with the dimensionality of simulations. The emitted power $P_{\gamma}$ of synchrotron emission is determined by the electron acceleration in an instantaneous rest frame. This acceleration is proportional to a dimensionless parameter\cite{LLclassicfields.1975} $\eta$,
\begin{equation} \label{Eq:eta}
    \eta \equiv \frac{\gamma_e}{E_S} \sqrt{\bigg(\bf{E} + {\rm{\frac{1}{c}}}[v \times B]\bigg){\rm{^2}} - {\rm{\frac{1}{c^2}}}(E\cdot v){\rm{^2}}},
\end{equation}
where $\bf{E}$ and $\bf{B}$ are the electric and magnetic fields acting on the electron, $\gamma_e$ and $\bf{v}$ are the relativistic factor and the velocity of the electron, and $E_S \approx 1.3 \times 10^{18} \ \rm{V/m}$ is the Schwinger field. The emitted power from an electron scales as $P_{\gamma} \propto \eta^2$. We are interested in photons with energy above 100 keV, a threshold shown to be critical for photon-photon pair production~\cite{PRApplied_power}.

Collecting all the forward-emitted photons over the duration of the simulations, \cref{fig:emission_position} compares the spatial distributions of photons produced in the 2D and 3D simulations. Noting that in the simulations performed here, once a photon is generated, the emission location is marked as the photon location for the duration of the simulation. Corresponding to the electron acceleration, the first peak of emission in 3D takes place at $x \sim 60\ \mu$m, well ahead of that in 2D which is located at $x \sim 140\ \mu$m [see \cref{fig:emission_position}(a)]. Up to the first peaks, 38\% of laser energy in 2D is transferred to particles (photons, electrons and ions) compared to 41\% in 3D. Of the transferred energies 0.47\% is converted into photons ($\varepsilon_{\gamma} > 100 \ \rm{keV}$) in the 2D simulation in contrast to 0.11\% in the 3D simulation. As shown in \cref{Eq:eta}, $\eta$ is directly proportional to electron's relativistic factor, i.e. $\eta \propto \gamma_e$.
In the previous section it is noted that the field amplitudes acting on the electrons are similar in both 2D and 3D. Thus the primary cause of the lower conversion rate in 3D is due to the lack of electrons at very high energies. \Cref{fig:emission_position}(b-c) illustrates the distribution of photons in ($x$,$y$) space. The common feature of both distributions is that most photons are generated close to the channel boundary, corresponding to the surfing motion of energetic electrons depicted in \cref{fig:Electron_spectrum_2D3D}(d-e). The second peak of emission in both simulations becomes weaker in amplitude and accumulates less photon yield following the first peak. The distribution of the emission in the 3D simulation on the transverse plane ($y$,$z$) is given in \cref{fig:emission_position}(d). It is clear that the emission is concentrated around $z=0 \ \mu\rm{m}$ plane with two populated lobes formed near the channel boundaries, meaning that the emission pattern on the transverse plane is correlated with the direction of laser polarization.

\Cref{fig:emission_angular} compares the angular distribution and energy spectrum of 2D and 3D simulations. The photon emission in 3D is projected onto a sphere, as illustrated \cref{fig:emission_angular}(a). Though the target is cylindrical, the emission pattern does not preserve the same symmetry. From \cref{fig:emission_angular}(b), the energy distribution along the azimuthal angle ${\rm{d}}E_{\gamma}/{\rm{d}}\theta_{\gamma}$
demonstrates a divergence of $10^{\circ}$ (i.e. the FWHM of the energy distribution curve), which is more than two times wider than that in the polar angle direction. The photon beam in the 2D case is found to be more collimated with a divergence of $6^{\circ}$ in ${\rm{d}}E_{\gamma}/{\rm{d}}\theta_{\gamma}$. Distributing emission over $\theta_{\gamma}$ and photon energy, \cref{fig:emission_angular}(c-d) manifest the photon beam in 2D is better collimated throughout the whole energy spectrum. To further evaluate the quality of the two photon beams, we compare the beam brilliance. The source size of the 3D target is easily decided by its radius while in 2D the source size is set as 4$\times$2 $\mu$m$^2$. It is found that the brilliance of $\gamma$-ray beams is 2.9$\times$$10^{21}$ and 5.8$\times$$10^{20}$ photons/s mm$^2$ mrad$^2$ 0.1\%BW (at 1 MeV) for 2D and 3D respectively. In \cref{fig:emission_angular}(e) starting from 1.5 MeV, the number of $\gamma$-ray photons in 2D surpasses that in 3D, projecting a larger brilliance in 2D for energy level above 1 MeV.

In this section, we compared the photon yield with regard to the simulation dimensionality. Since photon emission is a direct result of electron acceleration, the emission demonstrates correlated features as observed for electrons in \cref{impact_electron}. The first peak of photon emission in 3D arrives early in space due to the high phase velocity. The lack of high-energy electrons makes the conversion of laser energy to $\gamma$-ray photons less efficient in 3D. Besides the impact on photon number yield, the dimensionality also affects the collimation of the photon beam. With a large divergence angle and a small number of high-energy photons, the 3D $\gamma$-ray beam is less bright than the 2D beam.

\begin{figure*}
    \includegraphics[width=0.88\textwidth,trim={0.0cm 0.1cm 0cm 1cm},clip]{Figure5.png}
    \caption{\label{fig:emission_position} Photon distribution over space. (a) Photon energy distribution along $x$ axis. Photon number distribution in ($x$,$y$) space for (b) 2D and (c) 3D. (d) Transverse distribution of photon number for the 3D simulation plotted in ($y$,$z$) space. The considered photons are forward-emitted, accumulated up to 1100 fs and 500 fs for 2D and 3D respectively. The photon energy threshold is 100 keV.}
\end{figure*}

\begin{figure*}
    \includegraphics[width=1.0\textwidth,trim={0.0cm 0.1cm 0cm 1.02cm},clip]{Figure6.png}
    \caption{\label{fig:emission_angular} (a) Photon count per solid angle for the 3D simulation. The solid circles mark polar angles of $5^{\circ}$ and $15^{\circ}$. (b) Photon energy distribution over the azimuthal $\theta_{\gamma}$ and polar angles $\varphi_{\gamma}$ for both 2D and 3D, where $\theta_{\gamma} = {\rm{arctan}}(p_y/p_x)$ and $\varphi_{\gamma} = {\rm{arctan}}(pz/\sqrt{p_x^2+p_y^2})$. To make the curve for ${\rm{d}}E_{\gamma}/{\rm{d}}\theta_{\gamma}$ of the 3D simulation visible, its y axis is multiplied by a factor of 6. The spectral-angular distribution of the generated $\gamma$-ray pulse in the (c) 2D and (d) 3D simulations. Here $s_{\gamma} \equiv \rm{log_{10}}(\varepsilon_{\gamma}/MeV)$. (e) Photon energy spectra. The considered photons are forward-emitted, accumulated upto 1100 fs and 500 fs for 2D and 3D respectively. The photon energy threshold is 100 keV.}
\end{figure*}

\section{Summary and Conclusions}

We have demonstrated the effects of simulation dimensionality on electron acceleration and $\gamma$-ray
production. There are significant distinctions between the results obtained in 2D and 3D setups from both analytical consideration and numerical calculation. Though in numerical values $v_{ph}$ is close to the speed of light, the dephasing rate ($v_{ph}/c-1$) which determines the energy gain varies considerably with simulation geometry. The higher dephasing rate observable in the 3D setup terminates electron acceleration process early in space and time and leads to a reduction of photon emission when compared to 2D.

A 2D channel target presents a planar geometry while a 3D target has a cylindrical symmetry. Analytically we have shown that the phase velocity of laser fields propagating inside the targets closely depends on the target geometry; the phase velocity in 2D is smaller than that in 3D. To be more specific, the dephasing rate in a 2D setup is derived to be 1.5 times slower when controlling for the channel radius and laser wavelength. Through numerical simulations, it is found that the absolute majority of work done on energetic electrons comes from the longitudinal electric field, enabling the investigation of laser-driven particle acceleration based only on one single component of the electric fields. By tracking a fixed segment of laser fields the phase velocity in 2D is again shown to be smaller than in 3D, matching the correct trend shown in the analytical derivation. It is clear that in 2D simulations electrons surf for a longer period in an accelerating phase compared to 3D simulations. As a result, electrons in 2D have an elongated acceleration distance and present a more energetic spectrum, leading to an overestimate of maximum electron energy and the number of high-energy electrons when compared to more realistic 3D simulations.

Similar to electron acceleration, photon emission is strongly impacted by simulation dimensionality. Due to a lack of high-energy electrons, in 3D the photon ($\varepsilon_{\gamma} > 100$ keV) conversion rate is more than 4 times smaller and the emission falls behind on the generation of energetic photons ($\varepsilon_{\gamma} > 1.5$ MeV). In 3D, the emission is accumulated close to the $z=0$ plane with a narrow divergence along the polar angle. However the emission along the azimuthal angle is far more diverged in 3D compared to that in a 2D simulation. As a result, the photon beam produced in a 3D setup is found to be less bright. It is also worth noting that the subsequent peaks of photon emission drop sharply in amplitude and duration.

Though 2D numerical simulations are widely applied in the research of laser and micro-channel interactions, one should not ignore the overestimate and inaccuracy of results caused by the low phase velocity in 2D simulations. In particular, when carrying out numerical simulations to predict and optimize the output for laser micro-channel experiments, it matters to accurately know the exact location of peaked electron spectrum and therefore 3D simulations are indispensable. We conclude that the 2D simulations are capable of qualitatively reproducing the features of 3D simulations, but for quantitative evaluations and reliable predictions, 3D modelling is strongly recommended.

\section*{Acknowledgements}
T.W. and A.A. were supported by AFOSR (Grant No. FA9550-17-1-0382). D.B. was supported by NSF (Grant No. PHY 1903098). K.C. was supported by NSF (Grant No. 1821944). Simulations were performed with EPOCH (developed under UK EPSRC Grants No. EP$\/$G054940$\/$1, No. EP$\/$G055165$\/$1, and No. EP$\/$G056803$\/$1) using HPC resources provided by TACC at the University of Texas. This work used XSEDE, supported by NSF grant number ACI-1548562.

\section*{References}


\section{Introduction}
In Bhatt--Morrow--Scholze \cite{BMS18}, they compute $p$-complete topological periodic cyclic homology of the ring of integers $\mathcal{O}_L$ in a finite extension $L$ of $\mathbb{Q}_p$ over the base $E_{\infty}$ ring $\bS[z]:=\Sigma^{\infty}\mathbb{N}_+$, denoted $\TP(\mathcal{O}_L/\bS[z];\mathbb{Z}_p^{\wedge})$. They prove that $\TP_*(\mathcal{O}_L/\bS[z];\mathbb{Z}_p^{\wedge})$ is isomorphic to a periodized Frobenius twist of the Breul--Kisin module.\footnotemark \footnotetext{As a ring, the Frobenius twist of a Breul-Kisin module $\mathfrak{S}^{-1}$ is simply $\mathfrak{S}=W(\mathbb{F}_q)[[z]]$, but it is regarded as a $\mathfrak{S}$-algebra via the canonical Frobenius map $\varphi$, which lifts the Frobenius map on $W(\mathbb{F}_q)$ and sends $z$ to $z^p$.} The starting point of this note is the observation that the spectrum $\TP(\mathcal{O}_L/\bS[z];\mathbb{Z}_p^{\wedge})$ is complex oriented. I show that it carries a height one formal group law that is compatible with the cyclotomic structure map of $E_{\infty}$ rings
\[\varphi \colon \thinspace \TC^{-}(\mathcal{O}_L/S[z];\mathbb{Z}_p^{\wedge})\to \TP(\mathcal{O}_L/\bS[z];\mathbb{Z}_p^{\wedge}),\]
from \cite[Const. 11.5]{BMS18} (cf. \cite[Prop. 2.11]{LW20}).
This gives evidence that topological periodic cyclic homology shift chromatic complexity up by one, consistent with the red-shift philosophy of Ausoni--Rognes \cite{AR08}, where chromatic complexity is measured using complex orientations. Since algebraic K-theory is rarely complex oriented, it is less common to measure red-shift behavior using complex orientations, but here we make the case that it can be used as a method for studying red-shift behavior in $\TC^{-}$ and $\TP$ over certain choices of base $E_{\infty}$-ring.

Throughout, $L$ will denote a finite extension of $\mathbb{Q}_p$
with ring of integers $\mathcal{O}_L$, which is a complete discrete valuation ring of mixed characteristic $(0,p)$. We fix a uniformizer $\varpi_L$ in $\mathcal{O}_L$ and write $\mathbb{F}_q=\mathcal{O}_L/(\varpi_L)$ for the residue field, which is a finite field of characteristic $p$. We note that $\varpi_L$ satisfies $E_L(\varpi_L)=0$ where $E_L(z)=z^{e_L}+p\theta(z)$
is the associated Eisenstein polynomial of degree $e_L$ and $e_L$ is the ramification index. We note that there is an isomorphism of $W(\mathbb{F}_q)$-algebras $\mathcal{O}_L\cong W(\mathbb{F}_q)[z]/(E_L(z))$ by the classification of local fields of mixed characteristic $(0,p)$ \cite[II. \S 5 Thm. 4]{Ser79}. We write $\bS_{W(\mathbb{F}_q)}$ for the spherical Witt vectors, which is constructed as an $E_{\infty}$ ring in \cite{Lur21}. The choice of uniformizer $\varpi_L$ determines a map
$\mathbb{S}_{W(\mathbb{F}_q)}[z]\to \mathcal{O}_L,$
of $E_{\infty}$ rings sending $z$ to $\varpi_L$. We define
$THH(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z]))$
by replacing all tensors over $\mathbb{S}$ in the standard cyclic bar construction with tensors over $\bS_{W(\mathbb{F}_q)}[z]$.
By \cite[Rem. 2.12]{LW20}, this is simply the $p$-completion of $THH(\mathcal{O}_L/\mathbb{S}[z])$. We define
\begin{align*}
\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z]):=&\THH(\mathcal{O}_L/\mathbb{S}_{\mathbb{W}(\mathbb{F}_q)}[z])^{h\mathbb{T}} \text{ and } \\
\TP(\mathcal{O}_L/\mathbb{S}_{\mathbb{W}(\mathbb{F}_q)}[z]):=&\THH(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])^{t\mathbb{T}}
\end{align*}
where $\mathbb{T}\subset \mathbb{C}^{\times}$ is the subgroup of unit vectors. As we recall in Lemma \ref{main lemma}, it is shown in \cite[Prop. 11.10]{BMS18} (cf. Theorem 2.15 \cite{LW20}) that
\[ \TC_0^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z]) \cong \TP_0(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\cong \mathbb{W}(\mathbb{F}_q)[[z]]\]
and the Tate valued Frobenius map induces a map of $W(\mathbb{F}_q)$-algebras
\[\varphi \colon \thinspace \TC_0^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z]) \to \TP_0(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\]
extending the Frobenius map on $W(\mathbb{F}_q)$ by sending $z$ to $z^p$.

We say a formal group law $G$ over a commutative $\mathbb{F}_p$-algebra $R$ has $p$-height $n$ if the $p$-series satisfies
\[ [p]_G(X)=aX^{p^n}+O(X^{p^n+1})\in R[[x]]\]
where $a\ne 0$ in $R$.\footnote{This choice is different than the choice made by some authors. See \cite[Rem. 3.1.7]{Smi11} for a discussion of the benefits of each choice.}

\begin{thm}\label{main thm}
The complex orientation
\[ \MU\to \TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q}[z]))\]
maps $x_{p-1}$ to $E_L(z)t^{1-p}$. The elements $x_{p^n-1}$ map trivially for $n>1$. Consequently, the complex oriented spectrum $\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])/p$ carries a $p$-height one formal group law $F$ with $p$-series
\[[p]_{F}(X)=z^eX^{p}+O(X^{p+1})\]
and the complex oriented spectrum $\TP(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])/p$ carries a $p$-height one formal group law $G$ with $p$-series
\[[p]_{F}(X)=z^{pe}X^{p}+O(X^{p+1}).\]
\end{thm}
\begin{rem2}
By \cite[Prop. 11.10]{BMS18} and \cite[Thm 2.15]{LW20}, we know that $E_L(z)$ maps to $E_L(\varpi_L)=0\in \pi_0\THH(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)})$, so the multiplicative formal group law of Theorem \ref{main thm} reduces to the additive formal group law on $\THH(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)})/p$. This is consistent with the red-shift philosophy. Similarly, $E_L(z)\in \TP_0(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)})$ maps to $E_L(\varpi_L)=p\in\TP_0(\mathbb{F}_q)$ so this formal group law also reduces to the additive formal group law in $\TP_*(\mathbb{F}_q)/p$, which is also consistent with the red-shift philosophy.
\end{rem2}

\subsection{Conventions}
To fix models, we work in the $\infty$-category of spectra throughout and write $\otimes$ for the symmetric monoidal product and $\mathbb{S}$ for the symmetric monoidal unit. When we make statements in the category of abelian groups however, we also write $\otimes$ for the symmetric monoidal product in abelian groups and not the derived category and hope the distinction is clear from context. We write $\mathcal{A}_*$ for the dual Steenrod algebra defined as $\mathcal{A}_*=(\mathbb{F}_p)_*(\mathbb{F}_p)$ using our conventions. By an $E_n$ ring, I mean an algebra over the little $n$ disks operad $E_n$ in the $\infty$-category of spectra.

\subsection{Acknowledgements}
The author would like to thank Mona Merling, Thomas Nikolaus, and Holger Reich for comments on a draft of this note, and Jack Morava for inspiration. The author was informed that similar calculations where done by Bhatt--Morrow--Scholze, Hesselholt, and Krause--Nikolaus independently in unpublished work, so the author acknowledges these other computations.
\section{Spectral sequences}
Let $E$ be a homotopy associative ring spectrum, $A$ a $E_{\infty}$ ring and $B$ an $E_1$ algebra over $A$. Then topological Hochschild homology $\THH(B/A)$, defined as the realization of the cyclic bar construction in $A$-modules,
\[\THH(B/A)=|\xymatrix{A \ar[r]& \ar@<1ex>[l]\ar@<-1ex>[l]A\otimes_{B}A\ar@<.5ex>[r] \ar@<-.5ex>[r]& \ar@<-1ex>[l]\ar@<1ex>[l]\ar[l] A\otimes_{B}A\otimes_{B}A \ar@<1ex>[r]\ar@<-1ex>[r] \ar[r] & \ar@<.5ex>[l]\ar@<1.5ex>[l]\ar@<-1.5ex>[l]\ar@<-.5ex>[l]\dots }|\]
has an action of the circle group $\mathbb{T}$. There are associated multiplicative conditionally convergent spectral sequences with signature
\begin{align}
\label{S^1 homotopy} E_{2}^{*,*}=H^*(\mathbb{T};E_*\THH(B/A))\Rightarrow E_*^c\TC^{-}(B/A),\\
\label{S^1 Tate} \widehat{E}_{2}^{*,*}=\hat{H}^*(\mathbb{T};E_*\THH(B/A))\Rightarrow E_*^c\TP(B/A),
\end{align}
which are multiplicative when $A$ is an $E_{\infty}$ ring spectrum over $B$ by  \cite[Sec. 4]{BR05} and \cite[Thm. 6.47]{HR20} respectively. Here we write
\begin{align}
E_*^c(\TC^{-}(B/A))=&\lim_kE_*(\TC^{-}(B/A)[k]) \text{ and }\\
E_*^c(\TP(B/A))=&\lim_kE_*(\TP(B/A)[k])
\end{align}
where
\[\TC^{-}(B/A)[k]:=F (E\mathbb{T}_+^{(k)},THH(B/A))^{\mathbb{T}}\text{ and }\TP(B/A)[k]:= (\widetilde{E}\mathbb{T}/\widetilde{E}\mathbb{T}_k\wedge F (E\mathbb{T},THH(B/A)) )^{\mathbb{T}}\]
where $E\mathbb{T}^{(k)}$ is the $k$-skeleton of standard CW decomposition of $E\mathbb{T}$, $\widetilde{E}\mathbb{T}_k$ is the cofiber of the canonical map $E\mathbb{T}_+^{(k)}\to \mathbb{S}$ when $k\ge 0$ and
$\widetilde{E}\mathbb{T}_k=F(\widetilde{E}\mathbb{T}_{-k+1},\mathbb{S})$ when $k<0$.
\begin{rem2}
It is not always the case that $\THH(B/A)$ is a cyclotomic spectrum, but it will be a cyclotomic spectrum in our main cases of interest.
\end{rem2}

\section{The homotopical Tate spectral sequence for relative $\TP$ of $\mathbb{Z}_p$}
In this section, we recall the computation of
\[ \TC_*^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z]) \text{ and }\TP_*(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])\]
by \cite{BMS18,KN19,LW20}. In \cite[Thm. 3.1]{KN19}, they compute
\[ \THH_*(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])\cong \mathcal{O}_L[x]\]
where $\mathcal{O}_L[x]$ is a polynomial algebra over $\mathcal{O}_L$ with $|x|=2$. At the outset, we fix a preferred choice of generator $x=\sigma^2E_L(z)$ where
\[ \sigma^2\colon \thinspace \Sigma^2\overline{\mathcal{O}}_L\to \THH(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\]
	is the map constructed in \cite[Const. 3.2.3.]{HW20}, where $\overline{\mathcal{O}}_L$ is the fiber of the unit map $S_{W(\mathbb{F}_q)}[z]\to \mathcal{O}_{L}$. Note that $\THH(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])$ is an $E_\infty$ cyclotomic spectrum by \cite[Const. 11.5]{BMS18} (cf.  \cite[Prop. .11]{LW20}).
Consequently, we can compute $\TC_*^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])$ and $\TP_*(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])$ groups the conditionally convergent $\mathbb{T}$ homotopy fixed point and Tate spectral sequences, as well as the Frobenius map.
When $E=\mathbb{S}$, $A=\mathbb{S}_{W(\mathbb{F}_q)}[z]$ and $B=\mathcal{O}_L$, each of the spectral sequences \eqref{S^1 homotopy} and \eqref{S^1 Tate} collapse at the $E_2$-pages, however there are also hidden multiplicative extensions. We simply record the computation, as it appears in \cite[Prop. 11.10]{BMS18} (cf. \cite[Thm. 2.15]{LW20}).
\begin{lem}[Proposition 11.10 \cite{BMS18} (cf. Theorem 2.15 \cite{LW20})]\label{main lemma}
There are isomorphisms
\begin{align*}
\TC_*^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])\cong & W(\mathbb{F}_q)[[z]][x,t]/(tx-E_L(z))\text{ and }\\
\TP_*(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])\cong & W(\mathbb{F}_q)[[z]][t,t^{-1}]
\end{align*}
of graded $\mathfrak{S}=W(\mathbb{F}_q)[[z]]$-algebras with $|x|=2$, $|t|=-2$, and $|z|=0$. The Frobenius map
\[\varphi \colon \thinspace \TC^{-}_0(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)})\to \TP_0(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)})\]
is the lift of Frobenius on $W(\mathbb{F}_q)$ and sends $z$ to $z^p$. More generally, the map
\begin{align}\label{frob}
\varphi \colon \thinspace \TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)})\to \TP^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)})
\end{align}
induces a map of graded $\mathfrak{S}$-algebras on homotopy groups $\pi_*$ by sending $x$ to $t^{-1}$, $t$ to $\varphi(E_L(z))t$
\end{lem}
\begin{rem2}
The relation $tx=E_L(z)$ in $\TC_*^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q}[z])$ follows by \cite[Prop. 3.2.7]{HW20} and our choice of generator
\[ x=\sigma^2E_L(z).\]
\end{rem2}

\section{Complex orientations and $\TP$ of complete DVRS}
Most of this section will be devoted to proving the following result.
\begin{thm}\label{main thm}
The complex orientation
\[ \MU\to \TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q}[z]))\]
maps $x_{p-1}$ to $E_L(z)x^{p-1}$ and the elements $x_{p^n-1}$ map trivially for $n>1$. Consequently, the complex oriented spectrum $\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])/p$ carries a $p$-typical $p$-height one formal group law $F$ with $p$-series
\[[p]_{F}(X)=z^{e_L}X^{p}+O(X^{p+1})\]
up to multiplication by a unit in $W(\mathbb{F}_q)/(p)[[z]]$.
\end{thm}

\begin{proof}[Proof of Theorem \ref{main thm}]
We consider the spectral sequence \eqref{S^1 homotopy} for $E=\mathbb{F}_p$, $A=\mathbb{S}_{W(\mathbb{F}_q})[z]$ and $B=\mathcal{O}_L$
\[ H^*(\mathbb{T};(\mathbb{F}_p)_*(\THH(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q})[z])))\Rightarrow (\mathbb{F}_p)^c_*(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z];\mathbb{F}_p)\]
which has input
\[ \mathbb{F}_q\otimes \mathcal{A}//E(0)_* \otimes \mathbb{F}_p[x]\otimes \mathbb{F}_p[t]\]
regarded as a $\mathcal{A}_*$ comodule algebra with the evident algebra structure, the $\mathcal{A}_*$-coaction on $(\mathbb{F}_p)_*(\mathcal{O}_L)$ is given by restriction along the inclusion
$(\mathbb{F}_p)_*(\mathcal{O}_L)\rightarrow (\mathbb{F}_p)_*(\mathbb{F}_q)$ where $(\mathbb{F}_p)_*(\mathbb{F}_q)\cong \mathcal{A}_*\otimes \mathbb{F}_q$ has coaction induced by the coproduct, $x$ is a $\mathcal{A}_*$-comodule primitive, and $P(t)$ has the standard $\mathcal{A}_*$-coaction computed in \cite{Mil58}.
We claim that the first nontrivial differentials are
\[ d_{2}(\bar{\tau}_k)=tx^{p^k}\]
for $k\ge 1$. To see this, we first note that, for any $y\in H_*(\THH(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z]))$,
\[ d_{2}(y)=t\sigma y \]
by \cite[Prop. 3.2]{BR05}. We then recall that the map $\THH(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\to \THH(\mathbb{F}_q)$ is a map of $E_{\infty}$ ring spectra and therefore the map in mod $p$ homology is compatible with Dyer-Lashof operations. Consequently, we can use the formula $Q^{p^k}\sigma=\sigma Q^{p^k}$ by \cite{Bok87a} and the computation
\[\sigma \overline{\tau}_k=\sigma Q^{p^k}\overline{\tau}_0=Q^{p^k}(\sigma \tau_0)=(\mu_0)^{p^k} \]
by \cite{BMMS86} for $k\ge 1$, to show that $\sigma(\overline{\tau}_k)=x^{p^k}$ in $(\mathbb{F}_p)_*(\THH(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z]))$. This implies the claimed differential for $k\ge 1$. By \cite[Thm. 1.2]{BR05}, we know that
$\beta Q^{p^k}(\overline{\tau}_k)$ and
\[Q^{p^k}(\overline{\tau}_k)-\overline{\tau}_k(\sigma \overline{\tau}_k)^{p-1}\]
also survive to the $E_{\infty}$-page and they are infinite cycles in the $\mathbb{T}$ homotopy fixed point spectra sequence (and consequently permanent cycles in the $\mathbb{T}$ homotopy fixed point spectral sequence). Where
\[ \beta Q^{p^k}(\overline{\tau}_{k})=\overline{\xi}_{k+1} \text{ and }\tau^{\prime}_{k+1}:=Q^{p^k}(\overline{\tau}_k)-\overline{\tau}_k(\sigma \overline{\tau}_k)^{p-1}=\overline{\tau}_{k+1}-\overline{\tau}_k x^{p^k(p-1)}\]
for $k\ge 1$ by \cite{BMMS86}. Therefore, all of the generators are permanent cycles in the homological $\mathbb{T}$ homotopy fixed point spectral sequence except possibly $\overline{\xi}_1$ and $x$. In particular, the classes $\tau_k^{\prime}$ are permanent cycles in the homological $\mathbb{T}$ homotopy fixed point spectral sequence. So all products of these classes with other permanent cycles are also permanent cycles.

A priori, there is a possible differential of length $r\ge 2$ on $x$ and a possible differential of length $r\ge 2$ on $\overline{\xi}_1$, but these are the only remaining possibilities. Since $x$ is in the Hurewicz image it must also be a permanent cycle; i.e. the Hurewicz map
\[ \TC_*^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\to (\mathbb{F}_p)_*^c\TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\]
maps the class $x$ to the class with the same name. Therefore, the only remaining possibility is a differential on $\xi_1$

We consider the map of homological Tate spectral sequences
\[
	\xymatrix{
	H^*(\mathbb{T}, (\mathbb{F}_p)_*(\THH_*(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)})) \ar[r] \ar@{=>}[d] &H^*(\mathbb{T} ,(\mathbb{F}_p)_*(\THH(k))) \ar@{=>}[d] \\
	(\mathbb{F}_p)_*^c(\TC^{-}_*(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}) \ar[r] & (\mathbb{F}_p)_*(\TC^{-}_*(k)))
	}
\]
induced by the map
\[\THH(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\to \THH(k).\]
This map of Tate spectral sequences sends $x$ to $\mu_0$ and $\overline{\xi}_1$ to $\overline{\xi}_1$ by direct inspection.
In the target spectral sequence, we know that $\mu_0$ and $\overline{\xi}_1$ are infinite cycles.
This implies that if there is a differential on $\overline{\xi}_1$ in the source of the map of spectral sequences, then its target must map to zero at the same page as the length of this differential and similarly for $\mu_0$. Therefore, the only remaining possibilities are the differentials
\begin{align*}
d_r(\overline{\xi}_1)=t^rw_1x\text{ and }d_r(\overline{\xi}_1)=t^rw_2\xi_1 \\
\end{align*}
for some classes $w_1,w_2\in (\mathbb{F}_p)_*(\THH(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])$ such that $w_1x$ and $x_2\xi_i$ map to zero in
\[(\mathbb{F}_p)_*(\THH(\mathbb{F}_q/\bS_{W(\mathbb{F}_q)}[z]).\]
We now rule out these possibilities. Suppose there is a differential of the form
\[ d_r(\overline{\xi}_1)=t^rxw_1\text{ or }d_r(\overline{\xi}_1)=t^rw_2\xi_1 \]
for some nontrivial classes $w_1$, $w_2$. Then $\overline{\xi}_1$ does not survive the spectral sequence.
Consequently, when computing the Adams spectral sequence
with signature
\[ \Cotor_{\mathcal{A}_*}^{*,*}\left (\mathbb{F}_p;(\mathbb{F}_p)_*\left (\TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])[2]\right )\right )\Rightarrow \pi_*\left (\TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])[2] \right)\]
then the class
\[\overline{\xi}_1\otimes 1\in \mathcal{A}_*\otimes (\mathbb{F}_p)_*\left (\TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])[2]\right )\]
in the cobar complex would survive to the $E_2$-page giving a nontrivial element
\[\overline{\xi}_1\otimes 1\in  \Cotor_{\mathcal{A}_*}^{*,*}(\mathbb{F}_p;(\mathbb{F}_p)_*(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])[2]).\]
because it would not be killed by a $d_1$ differential on $\overline{\xi}_1\in (\mathbb{F}_p)_*(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])[2])$ in the Cobar complex and there are no further elements in
$(\mathbb{F}_p)_{2p-2}(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])[1])$ that could be the source of a differential killing $\overline{\xi}_1\otimes 1$. This would in turn imply that the map of Adams spectral sequences
\[ \Cotor_{\mathcal{A}_*}^{*,*}(\mathbb{F}_p,\mathbb{F}_p)\to \Cotor_{\mathcal{A}_*}^{*,*}(\mathbb{F}_p,(\mathbb{F}_p)_*(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])[2])),\]
sends $\overline{\xi}_1\otimes 1$ to the class of the same name. Since $\overline{\xi}_1\otimes 1$ detects $\alpha_1$ in $\pi_{2p-3}(S_p^{\wedge})$, it is a permanent cycle and since $\overline{\xi}_1\otimes 1$ is on the $1$-line of the $E^2$-page of the Adams spectral sequence and we have shown that it is an infinite cycle, it must also be a permanent cycle. Thus, $\alpha_1$ maps to a nontrivial element in $\pi_{2p-3}(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])[2])$. This of course cannot be the case because $\pi_*(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])[2]))$ is necessarily concentrated in even degrees since the input of the truncated homotopical homotopy fixed point spectral sequence
\[ E(t)\otimes \pi_*\left (\THH(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z]\right )\]
computing it is concentrated in even total degrees. We therefore reach a contradiction, so there cannot be a differential on $\overline{\xi}_1$.  There are therefore no further differentials, the $E_{\infty}$-page is isomorphic to
\[ \mathbb{F}_q\otimes \mathcal{A}//E(1)_*\otimes \mathbb{F}_p[x]/x^p\otimes \mathbb{F}_p[t,t^{-1}]\]
as $\mathcal{A}_*$-comodule algebras where $\mathcal{A}//E(1)_*$ is  the homology of the Adams summand $\ell$.

We apply the strongly convergent inverse-limit Adams spectral sequence of \cite[Prop. 2.2]{LNR10} with signature
\[ \lim_k \Cotor_{\mathcal{A}_*}^{*,*}(\mathbb{F}_p;(\mathbb{F}_p)_*(\TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])[k])\Rightarrow \pi_*(\TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\]
to compute $\pi_*(\TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)})$. By a change of rings isomorphism the input is isomorphic to
\[ \Cotor_{E(\bar{\tau}_0,\bar{\tau}_1)}^{*,*}(\mathbb{F}_p,\mathbb{F}_q[x]/x^p\otimes_{\mathbb{F}_p} \mathbb{F}_p[t])\]
and this is isomorphic to
\[ P(v_0,v_1)\otimes \mathbb{F}_q[x]/x^p\otimes_{\mathbb{F}_p} \mathbb{F}_p[t].\]
The spectral sequence then collapses for bidegree reasons. We argue, however, there are hidden extensions so that the $v_0$-tower on $\mathbb{F}_q\{1\}$ forms a copy of $\mathcal{O}_L$ and then there is a further hidden extension $tx=E_L(z)$ so in fact the $v_0$ tower on $1$ and $tx$ together form a copy of $W(\mathbb{F}_q)[[z]]$. We also must have a hidden extension $v_0tx^p=v_1$. This is the only way to produce the known abutment
\[ \pi_*(\TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\cong  W(\mathbb{F}_q)[[z]][x,t]/(tx-E_L(z)).\]
of Lemma \ref{main lemma}.

We also note that $\TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])$ is an $E_{\infty}$ ring and it is complex oriented because $\TC_*^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])$ is concentrated in even degrees. Consequently, there is a map of ring spectra
\[\MU \to \TC^{-}(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z]).\]
By Chadwick-Mandell \cite[Theorem 1.2.]{CM15}, this lifts to a map of $E_2$ rings. There is a multiplicative map of Adams spectral sequences
\begin{align*}
\Cotor_{\mathcal{A}_*}^{*,*}(\mathbb{F}_p,(\mathbb{F}_p)_*(\MU))\to \Cotor_{\mathcal{A}_*}^{*,*}(\mathbb{F}_p,(\mathbb{F}_p)_*(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q}[z])))
\end{align*}
which factors the map of Adams spectral sequences
\begin{align}
\Cotor_{\mathcal{A}_*}^{*,*}(\mathbb{F}_p,(\mathbb{F}_p)_*(\MU))\to \Cotor_{\mathcal{A}_*}^{*,*}(\mathbb{F}_p,(\mathbb{F}_p)_*(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])[2]))
\end{align}
where
\[(\mathbb{F}_p)_*(\TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q}[z])[2])\cong H\left (\mathbb{F}_q\otimes\mathcal{A}//E(0))_*\otimes P(x)\otimes P(t^{-1})\otimes E(t),d_2 \right)\]
and $d_2(w)=t\sigma w$ for all $w\in \mathbb{F}_q\otimes\mathcal{A}//E(0))_*\otimes P(x)\otimes P(t^{-1})$. In particular, $d_2(\overline{\tau}_1)=tx^p$. Consequently,
the element $\overline{\tau}_1\otimes 1$
maps to $\bar{\tau}_1\otimes 1$ and there is no differential in the target spectral sequence hitting this element. This element is on the 1-line and it is an infinite cycle since it is a permanent cycle on the source, surviving to become $x_{p-1}\in \pi_{2p-2}(\MU)$ in the abutment.
We therefore conclude that $x_{p-1}\in \pi_{2p-2}(\MU)$ maps to some element in $\TC^{-}_{2p-2}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])[2]$. Since $\THH(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])$ is complex oriented and it is a $\mathcal{O}_L$-module it must be equipped with the additive formal group law, so we know that $x_{p-1}$ must map to a $t$-divisible element. The only element in the correct degree in $\TC^{-}_{2p-2}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])[2]$ is $tx^p$ up to multiplication by a unit in $\mathcal{O}_L$. Since $\mathcal{O}_L\cong W(\mathbb{F}_q)[z]/E_L(z)$ we know that this unit must map to a unit in $W(\mathbb{F})_q$ modulo $z$. Consequently, $v_1$ maps to $f(z)x^p$ in $\TC_*^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}[z])$ where $f(z)\ne 0$ in $W(\mathbb{F}_q)[[z]]$, $f(z)\in (E_L(z))$ and $f(z)\equiv E_L(z)$ modulo $(z^{e_L+1})$. This implies $f(z)\dot{=}E_L(z)$ where $\dot{=}$ means that the two are equal up to a unit in $W(\mathbb{F}_q)[[z]]$. Since $E_L(z)=z^{e_L}+p\theta(z)$, we observe that $E_L(z)\equiv z^{e_L}$ modulo $p$ and consequently, writing $\bar{f}(z)$ for $f(z)$ modulo $p$, then $\bar{f}(z)\dot{=}z^{e_L}$ where now $\dot{=}$ means up to multiplication by a unit in $W(\mathbb{F}_q)/(p)[[z]]$.

In sum, the class $x_{p-1}\in \pi_{2p-2}\MU$ maps to $E_L(z)x^{1-p}$ in $\pi_{2p-2}TC^{-}(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)})$ up to multiplication by a unit in $W(\mathbb{F}_q)$ and consequently $v_1\in \pi_{2p-2}\BP$ maps to $z^{e_L}t^{1-p}$ in $(\mathbb{S}/p)_{2p-2}\TP(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)})$ up to multiplication by a unit in $\mathbb{F}_p$.

Suppose $x_{p^n-1}\in \pi_{2p^n-2}\MU_{(p)}$ is mapped nontrivially via the map
\[ \pi_*(\MU)\to \bS/p\wedge \TC^{-}_*(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)})\]
for $n>1$. Then $x_{p^n-1}^k$ also maps nontrivially for all $k\ge 1$ because this is a map of rings and by Lemma \ref{main lemma}.  Consequently, this implies that $\pi_*(L_{T(n)}\TP(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)}))$ is nonzero where $T(n)$ is telescope of a $v_n$ power self map of a type $n$ spectrum $V$. This also implies that $L_{T(n)}K(\mathcal{O}_L)$ is nontrivial. However, that contradicts Mitchell's theorem \cite{Mit90} and we reach a contradiction. Consequently, the $p$-typical formal group law of $\bS/p\wedge \TP(\mathcal{O}_L/\mathbb{S}_{W(\mathbb{F}_q)})$ has height exactly one.
\end{proof}
\begin{cor}
There $E_{\infty}$ ring complex orientation
\[ \MU\to \TP(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])\]
that factors through the Tate valued Frobenius map $\varphi$ of \eqref{frob} associates to $\TP(\mathcal{O}_L/\bS_{W(\mathbb{F}_q)}[z])/p$ a $p$-typical formal group law $G$ of $p$-height $1$ with $p$-series
\[ [p]_G(X)=z^{pe_L}X^p+O(X^{p+1})\]
up to multiplication by a unit in $W(\mathbb{F}_q)/(p)[[z]]$.
\end{cor}
\begin{proof}
This follows by combining Theorem \ref{main thm} with the description of the Tate valued Frobenius map \eqref{frob} in Lemma \ref{main lemma}.
\end{proof}

\bibliographystyle{alpha}


\section{Observation of long-range diffusion}

The studied samples, provided by Soraa Inc., are single QW InGaN structures embedded in $p-i-n$ junctions specially designed for PL studies. They are grown by metal-organic chemical vapor deposition on bulk GaN substrates. They have high internal quantum efficiency (IQE). The recombination physics of similar samples were extensively reported in our previous work.\cite{David17a,David19a,David19b,David19_review} The samples are covered with anti-reflective SiO2 coatings to avoid reflection of the exciting laser and emitted light.

\begin{figure*}
\includegraphics[width=\textwidth]{fig_ccd6}
\caption{\label{fig1} Photoluminescence experiments. (a) Experimental setup. (b-c) CCD image of the PL spot (logarithmic scale, shown on the right) at respective current densities of 25 and 9500 $A/cm^{2}$, respectively. Dotted line: isoline at 10\% of PL intensity. Dashed line: isoline at 10\% of laser excitation intensity.}
\end{figure*}

The PL setup is shown in Fig.~\ref{fig1}(a). The beam of a 405 nm laser diode is expanded and focused to a Gaussian spot with a waist of 2.5 $\mu$m. The laser's drive current is varied to control the excitation density (this does not affect the laser spot's shape, as shown in Fig.~\ref{fig2}(a)). The resulting PL signal is collected by a calibrated spectrometer, which gives access to the absolute PL IQE. Due to the laser's Gaussian spot profile, the excitation density varies spatially; for simplicity, we define a \textit{nominal} photoexcited current density ($J$) in a uniform excitation disc whose diameter is the beam waist. The laser signal can further be time-modulated, and the resulting time-dependent PL collected by a network analyzer to determine the differential carrier lifetime, as described in Ref.~\cite{David17a}.

A charge-coupled device (CCD) camera is placed in-line with the optical axis to image the laser or PL spot. Laser/PL imaging is selected by inserting appropriate dichroic filters; the image is carefully refocused in each case.
A small aperture (diameter $\sim$ 2 mm) is placed in the collimated path of the image, to limit the angular aperture of the collected signal to near-normal incidence.

Figs.~\ref{fig1} (b-c) show images of PL spots collected on a sample (4nm-thick QW, composition [In]=$13\%$, peak IQE 80\%) at two current densities. At moderate density (near peak IQE), the spot extends far away from the laser excitation: the radius where the PL reaches 10\% of its peak value (the so-called 10\%-radius) is more than 10 $\mu$m. For comparison, the 10\%-radius of the laser spot, also shown, is about 3$\mu$m. Note that, since luminescence scales with the square of the excitation at low density (in the Shockley-Read-Hall, SRH regime), the PL spot should actually be \textit{narrower} than the laser spot in the absence of diffusion. At a high excitation density (nearly 10 kA/cm$^{2}$), the PL spot is substantially smaller.

These observations are more easily quantified on cross-sectional plots,
shown in Fig.~\ref{fig2}(a) at various excitation densities (spanning from peak IQE to the droop regime). The PL spot shape strongly depends on the pump power, and extends over tens of $\mu$m at low power. Given the bimolecular nature of radiative recombination, the underlying carrier density extends even farther. The pronounced dependence on the excitation power confirms that optical artifacts cannot account for the large spot size at low excitation. More details are given in the Appendix, where we consider such artifacts in detail (including laser reflection, variations in laser spot size, PL re-absorption, multiple-bounce signal, and thermal effects) and show they do not influence our measurements.

This data cannot be explained assuming a constant $L_d$. Instead, a proper interpretation requires consideration of the power-dependent carrier dynamics.

To this effect, joint measurements of the IQE and differential carrier lifetime are performed on the sample at varying power density,\cite{David17a} and fitted by the common $ABC$ model to yield recombination coefficients $A$ (SRH), $B$ (radiative), $C$ (Auger). The $ABC$ model is only an approximation, as the radiative and Auger coefficients can display a carrier dependence (as discussed in Refs.~\cite{David17a,David19_BC}). Nonetheless, this carrier dependence is modest in the present sample, and a standard $ABC$ model is suitable. The resulting coefficients are: $A=1.2 \times 10^{5}$ s$^{-1}$, $B = 4 \times 10^{-14}$ cm$^3$s$^{-1}$, $C = 1 \times 10^{-34}$ cm$^6$s$^{-1}$. The very low value of $A$ (corresponding to an SRH lifetime $\sim 10$ $\mu$s) is explained by (1) the high quality of the sample and (2) the thick quantum well, whose low electron-hole overlap reduces the SRH coefficient.~\cite{David17b}

Armed with this knowledge, the PL data is fitted by a steady-state diffusion model:

\begin{subequations}
\begin{eqnarray}
G & = & R - D \Delta n, \label{eq1a}
\\
R & = & An+Bn^2+Cn^3, \label{eq1b}
\end{eqnarray}
\end{subequations}

where $R$ and $G$ are the local recombination and generation rates, $D$ the diffusion coefficient, $n$ the local carrier density. In Eq.~(\ref{eq1a}), $R$ is commonly written as $R=n/\tau$, with $\tau$ (the carrier lifetime) assumed constant. In contrast, in our analysis, $R$ depends on the local carrier density -- in other words, we take into account the carrier-density dependence of the carrier lifetime $\tau(n)$. This variation is very large: at low density (in the SRH regime) $\tau = 1/A \sim 10$ $\mu$s, whereas at high density (in the droop regime) $\tau$ reaches a few ns. This results in a substantial change in the local diffusion length $L_d = \sqrt{D \tau}$, from $\sim 50$ $\mu$m at low density (where $\tau=1/A$) to less than 1 $\mu$m at high density. Note that this model ignores various second-order effects, such as density-induced drift, polarization field screening, and any possible density dependence of $D$.

The model is solved numerically by finite differences with an iterative loop, solving Eqs.~(\ref{eq1a}) and ~(\ref{eq1b}) in turn until convergence. The spatial distribution of the luminescence is then computed as $Bn^2$. The data to be fitted is the set of PL spot profiles (Fig.~\ref{fig2}) and corresponding IQEs at varying power (shown in Fig.~\ref{fig3}(b)).  This is a very over-specified data set, since the only free parameter is the diffusion coefficient $D$. Good fits are obtained for $D = 3$ cm$^2$s$^{-1}$, a value in good agreement with previous reports\cite{Mensi18,Danhof11,Danhof12,Vertikov99,Aleksiejunas03}. This confirms that the PL spot size is determined by density-dependent carrier diffusion.

\begin{figure}
\includegraphics[width=8cm]{fig_diff_withlaser}
\caption{\label{fig2} PL diffusion data. (a) Cross-section of PL versus radius, for various current densities $J$. Solid lines: experimental data. Dashed lines: model. Dotted lines: laser profile at the highest and lowest excitation levels. Notice the logarithmic scale. (b) Luminescence spot radius versus current density, for two samples. Circles: experimental data. Lines: model.}
\end{figure}

Similar measurements are repeated on a sample with a different QW configuration: thickness 2.5 nm, composition [In]$\sim 25 \%$. Despite its high In composition, this sample has a relatively high peak IQE of 73\%. The PL spot size varies with excitation density, albeit in a smaller range than for the previous sample: from 7 $\mu$m at low density to 5 $\mu$m at high density. Again, this data is well explained by a diffusion model based on lifetime measurements. The experimental and modeled 10\%-radius are shown in Fig.~\ref{fig2} (b). This sample is best fitted with a higher diffusion coefficient $D=6$ cm$^2$s$^{-1}$.

Our observations might seem at odds with multiple literature reports of $L_d \sim$ 100~nm.\cite{Rosner97,Vertikov99,Kaneta08} In fact, such a short scale is valid at high excitation density (fast lifetime). In contrast, the present measurements, at larger distances and on a logarithmic scale, reveal the long-range behavior. Besides, samples of sufficient quality (i.e. low $A$ coefficient) are required to observe long-range diffusion -- this was not necessarily the case in past studies.

Neither are our conclusions in conflict with numerous microscopy studies in GaN (e.g. cathodoluminescence) with $\sim$100 nm resolution, because GaN has a much faster SRH lifetime ($\sim$50 ps\cite{Maeda19}) and accordingly a short $L_d$. Regarding microscopy in InGaN, very few studies exist at room temperature in high-IQE material -- both required to observe long-range diffusion. Ref.~\cite{Liu_thesis} did perform such a study and found that sub-micron features become smeared out at $T=170$ K -- in excellent agreement with our findings. Finally, note that imaging resolution around dislocations is not governed by diffusion.\cite{Kaganer19}

In summary, lateral diffusion in InGaN QWs can be substantial. Indeed, even in high carrier density experiments, the lifetime increases rapidly away from the excited region, leading to a large local $L_d$. This effect holds true in high-IQE samples, as it goes hand-in-hand with a slow SRH lifetime, which governs long-scale diffusion. The electron-hole separation, caused by the polarization fields that characterize III-nitride heterostructures, overall slows down the recombination dynamics~\cite{David19_review}: this leads to longer $L_d$ than in conventional III-V samples\cite{Fiore04} and to the pronounced density-dependence reported here.

\section{Implications of long-range diffusion}

We now discuss three implications of these observations, from fundamental to applied.

\begin{figure*}
\includegraphics[width=\textwidth]{fig_iqe_wide}
\caption{\label{fig3} (a) Sketch of thermalization process, driven by fast scattering (arrows) between localized and delocalized states (red shapes). (b) IQE from PL experiments. Solid lines: experimental data. The reference curve is obtained by varying the spot size. The other curves, with a constant spot size and varying power, have an altered shape due to diffusion. Dashed lines: fit by diffusion model. (c) Modeled diffusion of carriers from an injected area with 2.5 $\mu$m radius (injection boundary shown as dashed line) at various current densities. (d) Modeled IQE of LEDs of varying sizes, with non-radiative sidewall recombinations.}
\end{figure*}

\subsection{The IQE of III-nitride quantum wells}

A long-standing puzzle is how III-nitrides can reach high IQE despite a high threading dislocation density (TDD), as dislocations are believed to act as non-radiative centers. It is often argued that this can be explained by carrier localization at indium-rich fluctuations ($\sim$10 nm scale), which prevent the carriers from reaching dislocations.\cite{Chichibu06} However, the long-range diffusion reported here is incompatible with such tight localization. Accordingly, the Author's recent numerical studies found no support for a fully-localized carrier distribution at room temperature, but rather for a thermalized distribution with a mix of localized and propagative states, as sketched in Fig.~\ref{fig3}(a).\cite{David19b} Incidentally, the value of $D$ for InGaN (both here and in other reports) is on the same order as for bulk GaN\cite{Aleksiejunas03b}, further confirming that alloy disorder does not lead to full localization.

More quantitatively, the present samples were grown on bulk GaN substrates, and have a low TDD $\sim$ 1-5 $\times 10^6$ cm$^{-2}$. This corresponds to a few dislocations in a 10$\times$10 $\mu$m square. It is clear from Fig.~\ref{fig1} that at low-to-moderate excitation density, the carrier distribution will `see' tens of dislocations -- yet, this does not preclude a very high peak IQE. This would be even more true in common GaN-on-sapphire samples, where the TDD reaches $\sim 10^8$ cm$^{-2}$ and high IQE is nonetheless achievable.

It has also been proposed that delocalization at high density could account for IQE droop.\cite{Hammersley12} This is also incompatible with our observations, as diffusion actually decreases at higher density. This causes no contradiction with the previously-reported trend of a higher contrast at higher current in nanoscopic imaging of InGaN luminescence:\cite{Pozina15} this effect is due to a sharpening of the local carrier distribution (due to lower diffusion) which reveals inherent in-plane inhomogeneities.

Therefore, we conclude that localization alone cannot explain the high IQE of III-nitrides. Rather, dislocations must have a limited non-radiative effect -- possibly thanks to the shielding effect of local strain \cite{Liu16} or V-pits \cite{Hangleiter05}. In fact, there is conclusive evidence that SRH recombinations are instead mostly caused by point defects.\cite{Haller17}

\subsection{Interpretation of PL experiments}

The IQE of semiconductors is often studied with power-dependent PL: the excitation is varied to obtain a PL IQE curve without device fabrication. This curve can then be used for temperature-dependent analysis\cite{Watanabe03} or $ABC$ fitting\cite{Karpov15}.

However, our findings imply that the shape of the IQE curve can be strongly affected by diffusion, especially when a focused laser spot size is used (which is desirable to reach the droop regime). This is illustrated in Fig.~\ref{fig3}(b), which shows the PL IQE curve collected with various laser spot sizes. In this comparison, the reference IQE curve (whose details will be explained hereafter) is the PL IQE curve associated with the lifetime measurements; it constitutes a `ground truth' for the other PL measurements. In comparison, the measurement with a maximally-focused laser spot severely alters the IQE curve: the peak IQE is reached at a much higher nominal current density, and the overall shape is much narrower. Qualitatively, it is clear how diffusion causes such distortions: although the laser is tightly focused, the generated carriers diffuse laterally, which results in a much-reduced effective carrier density -- thus the late onset of peak IQE and droop. To verify this quantitatively, we compute the IQE versus excitation density, using Eqs.~(1a-b). The results, shown in Fig.~\ref{fig3}(b), agree very well with the experimental data; they should be compared with the theoretical IQE curve in the absence of diffusion effects, which agrees very well with the reference IQE curve.

As a further confirmation, measurements are repeated with de-focused laser spots under two de-focus conditions, with respective diameters 25 and 80 $\mu$m. The resulting IQE curves are shown in Fig.~\ref{fig3}(b): as the laser is defocused, the IQE curve shape is modified, and progressively converges towards the reference IQE shape. Again, the theoretical IQE curves predicted by the diffusion model are in excellent agreement with measurements.

Clearly, the distortion effects reported here would substantially alter any analysis of the IQE curve, and should be minimized. This can be done by using a less-focused laser beam (though this may preclude a high excitation density). A better approach is that used to obtain the reference IQE curve, which we will now clarify. This curve is in fact obtained by maintaining a constant (maximal) laser power, while progressively de-focusing the laser spot (in contrast to the conventional measurements where the spot size is constant and the laser power is varied). In this approach, diffusion artifacts are inherently minimized because the excitation spot size increases as the power density decreases: at all but the highest densities, the laser spot is large enough to minimize diffusion artifacts. This advantageous excitation scheme was used by the author in previous studies of carrier dynamics,\cite{David17a,David19a,David19b,David19_review} and is recommended for practitioners of PL measurements.

\subsection{Design of small devices}

There is currently much interest in optical devices with small lateral dimensions, including micro-LEDs and lasers (such as narrow-ridge or VCSELs). In these devices, a small area is injected electrically (e.g. by forming a selective p- contact), with the intention to restrict the QW carrier population to the same area. However, our results indicate that carriers will unavoidably diffuse away from the injected area. Fig.~\ref{fig3}(c) illustrates this. In this calculation, we assume typical recombination coefficients for a thin ($\sim 3$ nm) blue QW (namely  $A=1.2 \times 10^{6}$ s$^{-1}$, $B = 3 \times 10^{-12}$ cm$^3$s$^{-1}$, $C = 1 \times 10^{-31}$ cm$^6$s$^{-1}$, leading to a peak IQE above 80\%).\cite{Galler12,David19_review}  These faster coefficients lead to a shorter $L_d$ than in our first sample -- nonetheless, the low-density $L_d$ remains as high as 17 $\mu$m: this is directly tied to the moderate value of $A$ characteristic of high-IQE material. We assume a cylindrical injection with a 2.5 $\mu$m radius, and compute the radial carrier distribution at various current densities. A substantial diffusion is observed, together with a sharpening of the distribution at high density.

For micro-LEDs, this effect has implications regarding non-radiative recombinations at device sidewalls:  it explains how these can affect the efficiency of relatively-large devices (even hundreds of $\mu$m, Ref.~\cite{Olivier17}) -- which would clearly not occur if $L_d$ were only 100 nm. To confirm this, we model the effective IQE of a blue LED (square shape, same recombination coefficients as above) with sidewall recombinations of infinite velocity, and varying dimensions. The results, shown in Fig.~\ref{fig3}(d), confirm that even for a 100 $\mu$m-wide device, sidewall recombinations significantly affect the IQE. This result is in qualitative agreement with experimental data (e.g. Ref.~\cite{Olivier17}). One could consider adding a non-injected `belt' at the device perimeter to prevent carriers from reaching sidewall defects; even so however, a sizable long-range diffusion current to the non-injected region is unavoidable, and the prospects of this approach are limited. Instead, defect passivation appears more promising.\cite{Wong19}

For laser diodes, the diffusing carriers cause a reduction in injection efficiency near threshold, since they cannot contribute to lasing. The quantitative consequences for threshold density and carrier clamping call for future investigations, especially in emerging small-dimension lasers such as VCSELs.

In summary, long-range diffusion must be accounted for to understand and optimized micron-scale III-Nitride devices.

\section*{Conclusion}

In conclusion, we have observed carrier diffusion over tens of $\mu$m in high-quality InGaN quantum wells under optical excitation, which stands in contrast to the shorter lengths ($\sim 100$ nm) often derived by assuming a nanosecond-order carrier lifetime. Our observations are well explained by a conventional diffusion model, with a reasonable diffusion coefficient, if the full carrier dynamics are taken into account. Indeed, the lifetime varies by orders of magnitude with carrier density, and the diffusion length away from the excited region is governed by the SRH lifetime. Hence, long-range diffusion occurs in high-quality InGaN materials, due to their slow SRH lifetime. This has several important implications: the high IQE of InGaN LEDs cannot be simply ascribed to carrier localization; great care must be taken in avoiding diffusion artifacts in photoluminescence experiments; and upcoming small-scale emitters should be designed with long-range diffusion in mind.

\section*{Appendix - Exclusion of optical artifacts}

To be certain that the CCD images are actually measuring the PL spot, we investigated and excluded possible optical artifacts, as described below.

\subsection*{Laser spot variations}

One may wonder if the laser spot's profile itself may depend on the laser current. As already shown in Fig.~\ref{fig2}, this is not the case: by imaging the laser spot, we found that it remains stable at all currents. As a further confirmation, we repeated experiments where the laser power, rather than being current-controlled, was decreased by inserting a density filter  in the collimated path of the laser beam (attenuating it 300 times). As shown in Fig.~\ref{SMfig0}, we observed the expected effect: the PL radius increased to 15 $\mu m$ -- the same value as in our manuscript at the same power density.

\begin{figure}[!htbp]
\includegraphics[width=8cm]{SM_ND2}
\caption{\label{SMfig0} Blue: PL profile at maximum power. Red: PL profile with the laser attenuated 300 times by a density filter. The broadening of the PL spot is the same as when the laser power is reduced by controlling the current.}
\end{figure}

Although we discuss other possible artifacts below, we believe that the power-dependence of the PL spot, while the laser spot remains the same, is in itself evidence that our observations cannot be caused by an optical artifact (as none would cause such power dependence).

\subsection*{Laser reflection}

The laser beam is partially reflected on both facets of the sample, which may lead to additional excitation with a wider spot size. Hereafter, we show that these reflections do not contribute to our observations.

The sample is coated with SiO$_2$ anti-reflection layers; the layer on the substrate side is optimized for the laser wavelength (to minimize reflection), with a laser reflection of $\sim 1\%$ expected from modeling, and the layer on the epi side is optimized for the PL wavelength (to minimize light extraction effects), with a laser reflection of a few $\%$ expected from modeling.

\begin{figure}[!htbp]
\includegraphics[width=8cm]{SM_reflection_1s}
\caption{\label{SMfig1} Imaging of the laser spot with a tilted sample. (a) Image of the initial laser spot. (b) Image with a much longer integration time. The initial spot is saturated, and the reflection (after bounces off the substrate and epi interfaces) is visible, with an offset due to the sample tilt. The relative intensity of the reflection is 0.3\%.}
\end{figure}

The actual laser reflection can be measured experimentally in our setup. To this effect, the sample is slightly tilted so that the laser spot after a round-trip is offset from the initial laser spot on the CCD image (the offset between the two spots increases with the tilt angle, confirming that the secondary spot is caused by reflections). Note that the focus of the CCD's collecting lens must be slightly adapted to image the laser reflection, due to its extra round-trip in the sample. The intensity of the reflection can be measured by the intensity of the imaged spot; it is about 0.3\% of the laser spot's peak intensity. This is in reasonable agreement with the modeled reflection values (namely, we estimate that the substrate-side reflection is about 3\% and the epi-side reflection is about 10\%). Given the broadening of the laser spot after reflection ($\sim 5$ $\mu$m radius), the relative peak excitation intensity of the reflected spot is well below 1\%, which is too low to induce luminescence on the scale we are observing (our PL data shows two decades of dynamic range).

To further confirm unambiguously that this laser reflection does not contribute to the PL measurement, we can actually measure the PL spot size in this tilted-sample geometry. Fig.~\ref{SMfig2} shows such measurements.

\begin{figure}[!htbp]
\includegraphics[width=8cm]{SM_reflection_2s}
\caption{\label{SMfig2} PL images in the same tilted-sample geometry as in Fig.~\ref{SMfig1}. (a) At maximum excitation density, the primary PL spot has a radius of $\sim 4-5 \mu$m (same value as for normal incidence). (b) In the same conditions, but with a much longer integration time, the PL from the reflected laser spot can be seen. It has a large radius, due to the low excitation density and the broadening of the reflected laser spot. The relative peak PL intensity is 1\% of the primary PL spot. (c) At lower excitation density, the primary PL spot has a radius of $\sim$15~$\mu$m (same value as for normal incidence).}
\end{figure}

Fig.~\ref{SMfig2}(a): at the maximum laser power, the initial PL spot has a 10\%-radius of $\sim 4-5$ $\mu$m. This is the same value as reported in normal-incidence geometry.

Fig.~\ref{SMfig2}(b): at this same power, the PL spot size from the laser reflection (which is of course offset from the initial PL spot) has a large radius, about 15 $\mu$m. This is because the reflected spot is excited at low intensity, and hence is much larger due to diffusion. This figure shows an image with a long CCD integration time, such that the primary PL spot is saturated and the reflected PL spot can be measured.

Fig.~\ref{SMfig2}(c): at the minimum laser power, the initial PL spot has a 10\%-radius of 15 $\mu$m, again the same as for normal incidence.

In summary, if we tilt the sample to move the laser reflection away from the initial laser spot, we obtain the exact same PL spot sizes as reported previously. This confirms laser reflection plays no roles in the results.

\subsection*{PL reabsorption / photon recycling}

\begin{figure}[!htbp]
\includegraphics[width=8cm]{SM_absorb}
\caption{\label{SMfig3} PL intensity (at low excitation) and single-pass absorption of the QW. The strong Stokes shift leads to a low net single-pass reabsorption $\sim 0.02\%$.}
\end{figure}

One may wonder if PL guided inside the sample could be re-absorbed by the QW and lead to PL re-emission (a process also known as photon recycling). As we will now show, reabsorption in this sample is very weak and causes no contribution to the PL measurements.

The single-pass reabsorption in this single-QW sample is very low. It can be quantified accurately by measuring the absorption and PL spectra, as shown in Fig.~\ref{SMfig3} (with the PL spectrum shown at low power density).

The corresponding single-pass reabsorption is $\sim$0.02\%. This very low value is due to having only one QW and to the strong Stokes shift in this sample, caused by the p-i-n geometry. The single-pass reabsorption increases at higher power density (because the PL spectrum blue-shifts), and it reaches $\sim$0.5\% at the highest density investigated.

The resulting net re-excitation of the QW in the experiment is caused by two sources of reflection. (1) PL reflected from the epi surface (located 150~nm away from the QW): this reflection occurs within the same lateral region as the laser spot, because light cannot travel laterally far over such a small thickness. (2) PL reflected from the substrate surface (located $L=150$~$\mu$m away from the QW): this reflection is diluted by the very long distance traveled, and amounts to a very low re-excitation density (scaling with $1/L^2)$.

\begin{figure}[!htbp]
\includegraphics[width=8cm]{SM_LT}
\caption{\label{SMfig4} Comparison of the experimental initial QW excitation by the laser (blue) and computed the re-excitation due to PL reabsorption (red). Re-excitation is always lower by orders of magnitude, precluding any impact on our results. [Note that the long tail of the initial excitation is caused by background noise of the CCD].}
\end{figure}

These effects are easily quantified by a simple raytracing calculation, taking into account the sample and excitation geometry, and the QW reabsorption. The results are shown in Fig.~\ref{SMfig4}. In this calculation, we use the worst-case single-pass absorption of 0.5\% (corresponding to the highest excitation density). The computed re-excitation is compared with the experimental initial excitation (defined as the product of laser power density times absorption coefficient at the laser wavelength), both in absolute units. Re-absorption is most intense at the beam center (this corresponds to effect (1) above: reflection at the epi surface) and then strongly decreases away from the beam. It is always orders of magnitude smaller than the initial excitation, and therefore does not contribute to the PL signal we measure.

It should be noted that the \textit{total re-excitation} (integrated over the whole sample area) is actually not small -- in this calculation, more than 10\% of the emitted light eventually gets reabsorbed. However, this occurs over the whole area of the sample; therefore, the re-excitation density is very low, as shown above.

\begin{figure}[!htbp]
\includegraphics[width=8cm]{SM_iris}
\caption{\label{SMfig5} PL spot cross-section at the maximum excitation density. Blue: with an iris limiting the numerical aperture of the collection; red: without the iris.}
\end{figure}

\subsection*{Multiple bounces}

Despite the presence of anti-reflection coatings, a fraction of the PL is reflected at interfaces. Therefore, PL emitted off-axis can travel laterally inside the sample, and lead to a broadening / smearing-out of the PL spot. We find that this effect is indeed significant at the highest laser density (where the PL spot is the sharpest), if no precautions are taken. Fig.~\ref{SMfig5} compares two measurements at the highest laser intensity. In one, the numerical aperture of the collecting lens is not limited (leading to a collection $>10^o$), whereas in the other a small iris (diameter 2 mm) placed in the collimated imaging path limits the collection to near normal incidence. The former measurement shows an artificially broad tail caused by multiple-bounce PL. In the latter, off-axis PL is not collected and the intrinsic PL spot shape is resolved. In the rest of this article, an iris was used to remove this artifact.

Note that the iris does not affect the results at lower power density, where diffusion is stronger and the PL spot is broad, so that multiple-bounce PL does not lead to further broadening.

\subsection*{Non-linear absorption}

One might worry that two-photon absorption (2PA) could alter our measurements, leading to a non-linear power dependence. However, 2PA is too low by orders of magnitude to contribute to PL. The 2PA coefficient in InGaN is on the order of $\beta \sim 10$ cm/GW. We are using a 70 mW CW laser diode; even at the peak laser intensity (say with a 1 $\mu$m radius), the resulting 2PA absorption coefficient is thus $\sim 0.02$ cm$^{-1}$ -- to be compared with the linear absorption coefficient $\sim 10^4-10^5$ cm$^{-1}$.

\subsection*{Thermal effects}

One might worry that lattice heating at high excitation could influence diffusion. However, the total absorbed laser power is small ($\sim$2.5 mW at the highest density), and we expect it to be dissipated in the GaN substrate with its high thermal conductance. To verify this, we repeated a measurement at the maximum power, comparing the laser in CW mode and pulsed mode (100~ns pulses, 10~$\mu$s period, 1\% duty factor). The PL profiles, shown in Fig.~\ref{SMfig6}, are not affected by the duty factor.

\begin{figure}[!htbp]
\includegraphics[width=8cm]{SM_thermal}
\caption{\label{SMfig6} PL spot cross-section at the maximum excitation density, with CW and pulsed excitation. The two profiles are identical, showing that no thermal effects influence the results.}
\end{figure}